公开(公告)号：US20170084657A1

公开(公告)日：2017-03-23

申请号：US14857657

申请日：2015-09-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu WEI ,  Hsin-Chi CHEN ,  Ssu-Chiang WENG ,  Yung-Lung HSU ,  Yen-Liang LIN ,  Chin-Hsun HSIAO

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14689

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a light sensing feature, a negative oxide layer, a gate dielectric layer and a transfer gate. The light sensing feature is configured in the substrate to detect an incoming radiation. The negative oxide layer is over the light sensing feature. The gate dielectric layer is over the negative oxide layer. The transfer gate is over the gate dielectric layer.

公开(公告)号：US20240021651A1

公开(公告)日：2024-01-18

申请号：US18360605

申请日：2023-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Su-Hua CHANG ,  Chia-Yu WEI ,  Zen-Fong HUANG ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14627 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/02164

Abstract: An image sensor includes a pixel array, a dielectric layer, a plurality of first conductive shielding regions, and a plurality of second conductive shielding regions. The pixel array includes photodiodes within a substrate. The dielectric layer is over the substrate. From a plan view, the first conductive shielding regions are adjacent four corners of the pixel array, and the second conductive shielding regions are adjacent four sides of the pixel array. The second conductive region has a length-to-width ratio greater than a length-to-width ratio of the first conductive region.

公开(公告)号：US20190148450A1

公开(公告)日：2019-05-16

申请号：US15809458

申请日：2017-11-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer and a trench isolation. The semiconductor substrate has a front side surface and a back side surface opposite to the front side surface. The radiation sensing member is disposed in a photosensitive region of the semiconductor substrate and extends from the front side surface of the semiconductor substrate. The radiation sensing member includes a semiconductor material with an optical band gap energy smaller than 1.77 eV. The device layer is over the front side surface of the semiconductor substrate and the radiation sensing member. The trench isolation is disposed in an isolation region of the semiconductor substrate and extends from the back side surface of the semiconductor substrate.

公开(公告)号：US20230118159A1

公开(公告)日：2023-04-20

申请号：US18066744

申请日：2022-12-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146 ,  H01L31/103 ,  H01L31/0352

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer, and a color filter layer. The semiconductor substrate has a photosensitive region and an isolation region surrounding the photosensitive region. The radiation sensing member is embedded in the photosensitive region of the semiconductor substrate. The radiation sensing member has a material different from a material of the semiconductor substrate, and an interface between the radiation sensing member and the isolation region of the semiconductor substrate includes a direct band gap material. The device layer is under the semiconductor substrate and the radiation sensing member. The color filter layer is over the radiation sensing member and the semiconductor substrate.

公开(公告)号：US20200321294A1

公开(公告)日：2020-10-08

申请号：US16907838

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Cheng-Yuan LI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L23/00 ,  H01L27/146

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first bonding layer formed below a first substrate, a first bonding via formed through the first oxide layer and the first bonding layer, a first dummy pad formed in the first bonding layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over a second substrate, a second bonding via formed through the second bonding layer, and a second dummy pad formed in the second bonding layer. The semiconductor structure includes a bonding structure between the first substrate and the second substrate, wherein the bonding structure includes the first bonding via bonded to the second bonding via and the first dummy pad bonded to the second dummy pad.

公开(公告)号：US20190006548A1

公开(公告)日：2019-01-03

申请号：US16014218

申请日：2018-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Yu-Ting Kao ,  Yen-Liang Lin ,  Wen-I Hsu ,  Hsun-Ying Huang ,  Kuo-Cheng Lee ,  Hsin-Chi Chen

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0216

Abstract: A photodetector includes: a substrate having a first doping type; a first semiconductor region having a second doping type, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region having the first doping type, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.

公开(公告)号：US20150171136A1

公开(公告)日：2015-06-18

申请号：US14105063

申请日：2013-12-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Zen-Fong HUANG ,  Chia-Yu WEI ,  Chi-Cherng JENG ,  Hsin-Chi CHEN

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: A backside illuminated CMOS image sensor and a manufacturing method thereof are provided. Embedded micro-lenses disposed respectively on concave surfaces of a buffer oxide layer, wherein the concave surfaces are positioned to respectively align with photodiodes of pixel array of the CMOS image sensor. The embedded micro-lenses can confine incident light to the photodiodes to reduce optical crosstalk between adjacent pixels.

Abstract translation: 提供背面照明CMOS图像传感器及其制造方法。 分别设置在缓冲氧化物层的凹面上的嵌入式微透镜，其中凹面被分别对准与CMOS图像传感器的像素阵列的光电二极管对准。 嵌入式微透镜可以将入射光限制在光电二极管上，以减少相邻像素之间的光学串扰。

公开(公告)号：US20240088195A1

公开(公告)日：2024-03-14

申请号：US18511731

申请日：2023-11-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/103

CPC classification number: H01L27/14649 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14698 ,  H01L31/035272 ,  H01L31/103 ,  H01L27/14621 ,  H01L27/14627 ,  H01L31/0336

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

公开(公告)号：US20220271071A1

公开(公告)日：2022-08-25

申请号：US17744175

申请日：2022-05-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Su-Hua CHANG ,  Chia-Yu WEI ,  Zen-Fong HUANG ,  Chi-Cherng JENG

IPC: H01L27/146

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

公开(公告)号：US20200212244A1

公开(公告)日：2020-07-02

申请号：US16818934

申请日：2020-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Yu-Ting KAO ,  Yen-Liang LIN ,  Wen-I HSU ,  Hsun-Ying HUANG ,  Kuo-Cheng LEE ,  Hsin-Chi CHEN

IPC: H01L31/107 ,  H01L31/0216 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224

Abstract: A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.