公开(公告)号：US20190131251A1

公开(公告)日：2019-05-02

申请号：US15866472

申请日：2018-01-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Rung-De Wang ,  Chen-Hsun Liu ,  Chin-Yu Ku ,  Te-Hsun Pang ,  Chia-Hua Wang ,  Pei-Shing Tsai ,  Po-Chang Lin

IPC: H01L23/00 ,  H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/31

Abstract: A semiconductor structure includes a semiconductor device, a first seal ring, a second seal ring, and a plurality of through semiconductor vias (TSV). The semiconductor device has a first surface and a second surface opposite to the first surface. The first seal ring is disposed on the first surface of the semiconductor device and is adjacent to edges of the first surface. The second seal ring is disposed on the second surface of the semiconductor device and is adjacent to edges of the second surface. The TSVs penetrate through the semiconductor device and physically connect the first seal ring and the second seal ring.

公开(公告)号：US10818612B2

公开(公告)日：2020-10-27

申请号：US16372436

申请日：2019-04-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Rung-De Wang ,  Chen-Hsun Liu ,  Chin-Yu Ku ,  Te-Hsun Pang ,  Chia-Hua Wang ,  Pei-Shing Tsai ,  Po-Chang Lin

IPC: H01L23/00 ,  H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L23/31 ,  H01L21/683 ,  H01L23/58 ,  H01L21/78 ,  H01L21/782 ,  H01L21/784 ,  H01L21/8238 ,  H01L23/498 ,  H01L23/538

Abstract: A manufacturing method of a semiconductor structure includes at least the following steps. A semiconductor device having a first surface and a second surface opposite to the first surface is provided. A plurality of through semiconductor vias (TSV) embedded in the semiconductor device is formed. A first seal ring is formed over the first surface of the semiconductor device. The first seal ring is adjacent to edges of the first surface and is physically in contact with the TSVs. A second seal ring is formed over the second surface of the semiconductor device. The second seal ring is adjacent to edges of the second surface and is physically in contact with the TSVs.

公开(公告)号：US20190371741A1

公开(公告)日：2019-12-05

申请号：US16372436

申请日：2019-04-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Rung-De Wang ,  Chen-Hsun Liu ,  Chin-Yu Ku ,  Te-Hsun Pang ,  Chia-Hua Wang ,  Pei-Shing Tsai ,  Po-Chang Lin

IPC: H01L23/00 ,  H01L21/78 ,  H01L23/31 ,  H01L21/768 ,  H01L23/522 ,  H01L23/48

Abstract: A manufacturing method of a semiconductor structure includes at least the following steps. A semiconductor device having a first surface and a second surface opposite to the first surface is provided. A plurality of through semiconductor vias (TSV) embedded in the semiconductor device is formed. A first seal ring is formed over the first surface of the semiconductor device. The first seal ring is adjacent to edges of the first surface and is physically in contact with the TSVs. A second seal ring is formed over the second surface of the semiconductor device. The second seal ring is adjacent to edges of the second surface and is physically in contact with the TSVs.

公开(公告)号：US10276514B1

公开(公告)日：2019-04-30

申请号：US15866472

申请日：2018-01-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Rung-De Wang ,  Chen-Hsun Liu ,  Chin-Yu Ku ,  Te-Hsun Pang ,  Chia-Hua Wang ,  Pei-Shing Tsai ,  Po-Chang Lin

IPC: H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L21/768 ,  H01L21/782 ,  H01L21/784 ,  H01L23/498 ,  H01L23/522 ,  H01L23/538 ,  H01L21/8238

Abstract: A semiconductor structure includes a semiconductor device, a first seal ring, a second seal ring, and a plurality of through semiconductor vias (TSV). The semiconductor device has a first surface and a second surface opposite to the first surface. The first seal ring is disposed on the first surface of the semiconductor device and is adjacent to edges of the first surface. The second seal ring is disposed on the second surface of the semiconductor device and is adjacent to edges of the second surface. The TSVs penetrate through the semiconductor device and physically connect the first seal ring and the second seal ring.

公开(公告)号：US09837366B1

公开(公告)日：2017-12-05

申请号：US15390519

申请日：2016-12-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hsun Liu ,  Chin-Yu Ku ,  Rung-De Wang ,  Wei-Lun Hsieh ,  Chia-Hua Wang ,  Jheng-Hong Chen ,  Pei-Shing Tsai

IPC: H01L23/544 ,  H01L23/58 ,  H01L23/00 ,  H01L21/78 ,  H01L21/3213

CPC classification number: H01L23/585 ,  H01L21/78

Abstract: A semiconductor structure has a semiconductor device, a first seal ring, and a second seal ring. The semiconductor device has a first surface and a second surface opposite to the first surface. The first seal ring is disposed on the first surface of the semiconductor device and adjacent to edges of the first surface. The second seal ring is disposed on the second surface of the semiconductor device and adjacent to edges of the second surface. A semiconductor manufacturing process is also provided.