公开(公告)号：US10672860B2

公开(公告)日：2020-06-02

申请号：US16587305

申请日：2019-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Chung Hsu ,  Chung-Long Chang ,  Tsung-Yu Yang ,  Hung-Chi Li ,  Cheng-Chieh Hsieh ,  Che-Yung Lin ,  Grace Chang

IPC: H01L49/02 ,  H01F27/28 ,  H01L23/00 ,  H01F27/29 ,  H01F27/24 ,  H01L21/768 ,  H05K1/18 ,  H01L23/528 ,  H01L23/522 ,  H01L21/321 ,  H01L21/027

Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.

公开(公告)号：US10475877B1

公开(公告)日：2019-11-12

申请号：US16106525

申请日：2018-08-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Chung Hsu ,  Chung-Long Chang ,  Tsung-Yu Yang ,  Hung-Chi Li ,  Cheng-Chieh Hsieh ,  Che-Yung Lin ,  Grace Chang

IPC: H01L49/02 ,  H01L23/00 ,  H01F27/28 ,  H01F27/24 ,  H01F27/29 ,  H05K1/18 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L21/321 ,  H01L21/027

Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.

公开(公告)号：US20200286981A1

公开(公告)日：2020-09-10

申请号：US16879913

申请日：2020-05-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Chung Hsu ,  Chung-Long Chang ,  Tsung-Yu Yang ,  Hung-Chi Li ,  Cheng-Chieh Hsieh ,  Che-Yung Lin ,  Grace Chang

IPC: H01L49/02 ,  H01L23/00 ,  H01F27/28 ,  H01F27/24 ,  H01F27/29 ,  H05K1/18 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.

公开(公告)号：US20200066831A1

公开(公告)日：2020-02-27

申请号：US16587305

申请日：2019-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Chung Hsu ,  Chung-Long Chang ,  Tsung-Yu Yang ,  Hung-Chi Li ,  Cheng-Chieh Hsieh ,  Che-Yung Lin ,  Grace Chang

IPC: H01L49/02 ,  H01L23/522 ,  H01F27/28 ,  H01L23/00 ,  H01F27/29 ,  H01F27/24 ,  H01L21/768 ,  H05K1/18 ,  H01L23/528

Abstract: A multi-terminal inductor and method for forming the multi-terminal inductor are provided. In some embodiments, an interconnect structure is arranged over a semiconductor substrate. A passivation layer is arranged over the interconnect structure. A first magnetic layer is arranged over the passivation layer, and a conductive wire laterally extends from a first input/output (I/O) bond structure at a first location to a second I/O bond structure at a second location. A third I/O bond structure branches off of the conductive wire at a third location between the first location and the second location. A connection between the third I/O bond structure and the first I/O bond structure has a first inductance. Alternatively, a connection between the first I/O bond structure and the second I/O bond structure has a second inductance different than the first inductance.