公开(公告)号：US11387109B1

公开(公告)日：2022-07-12

申请号：US17193693

申请日：2021-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Lun Chang ,  Pin-Chuan Su ,  Hsin-Chieh Huang ,  Ming-Yuan Wu ,  Tzu kai Lin ,  Yu-Wen Wang ,  Che-Yuan Hsu, deseased

IPC: H01L21/306 ,  H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L21/308

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.