公开(公告)号：US20090236688A1

公开(公告)日：2009-09-24

申请号：US12478583

申请日：2009-06-04

Applicant: Tai-Heui CHO ,  Kun-Gu LEE

Inventor： Tai-Heui CHO ,  Kun-Gu LEE

IPC: H01L23/525

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate having a fuse region and an interconnection region, a first insulating layer formed in the fuse region and the interconnection region, a fuse pattern formed on the first insulating layer in the fuse region, the fuse pattern including a first conductive pattern and a first capping pattern, an interconnection pattern formed on the first insulating layer in the interconnection region, including a second conductive pattern and a second capping pattern, and having a thickness greater than the thickness of the fuse pattern, and a second insulating layer formed on the first insulating layer and covering the fuse pattern.

Abstract translation: 半导体器件包括具有熔丝区域和互连区域的半导体衬底，形成在熔丝区域和互连区域中的第一绝缘层，形成在熔丝区域中的第一绝缘层上的熔丝图案，熔丝图案包括第一 导电图案和第一封盖图案，形成在互连区域中的第一绝缘层上的互连图案，包括第二导电图案和第二封盖图案，并且具有大于熔丝图案的厚度的厚度，以及第二绝缘体 层，形成在第一绝缘层上并覆盖熔丝图案。