Substrate processing apparatus
    1.
    发明授权

    公开(公告)号:US10570512B2

    公开(公告)日:2020-02-25

    申请号:US14624799

    申请日:2015-02-18

    IPC分类号: H01J37/32 C23C16/455

    摘要: A substrate processing apparatus of the present disclosure includes a placing table provided to be rotatable around an axis; a gas supplying section that supplies gas to regions through which a substrate sequentially passes while being moved in a circumferential direction with respect to the axis as the placing table is rotated; and a plasma generating section that generates plasma using the supplied gas. The plasma generating section includes an antenna that radiates microwaves, and a coaxial waveguide that supplies the microwaves to the antenna. Line segments constituting a plane shape of the antenna when viewed in a direction along the axis include two line segments which are spaced to be distant from each other as being spaced away from the axis. The coaxial waveguide supplies the microwaves to the antenna from a gravity center of the antenna.

    Plasma processing apparatus
    2.
    发明授权

    公开(公告)号:US10546725B2

    公开(公告)日:2020-01-28

    申请号:US15429393

    申请日:2017-02-10

    摘要: Disclosed is a plasma processing apparatus including: a processing container that defines a processing space; a microwave generator that generates microwaves for plasma excitation; a dielectric having a facing surface that faces the processing space; a slot plate provided on a surface of the dielectric opposite to the facing surface and formed with a plurality of slots that radiate the microwaves to the processing space through the dielectric; and a conductor pattern that is provided on the facing surface of the dielectric and converges an electric field corresponding to the microwaves radiated from each of the slots.

    Plasma processing apparatus
    3.
    发明授权

    公开(公告)号:US10347466B2

    公开(公告)日:2019-07-09

    申请号:US15173241

    申请日:2016-06-03

    IPC分类号: H01J37/32 H01J37/16

    摘要: Disclosed is a plasma processing apparatus that includes a processing container configured to accommodate a wafer, and a dielectric window provided to hermetically seal an opening formed in a top portion of the processing container, and configured to transmit microwaves into the processing container. The dielectric window has a thickness of 3λ/8 or less (here, λ is a wavelength of the microwaves) at least at a predetermined position where a microwave power is concentrated, and a protrusion is formed at the predetermined position on a bottom surface of the dielectric window to protrude downward from the bottom surface.