公开(公告)号：US10811283B2

公开(公告)日：2020-10-20

申请号：US15904539

申请日：2018-02-26

申请人： TOKYO ELECTRON LIMITED

发明人： Miyako Kaneko ,  Keiji Tanouchi ,  Takehiko Orii ,  Itaru Kanno ,  Meitoku Aibara ,  Satoru Tanaka

IPC分类号： H01L21/02 ,  H01L21/67

摘要： A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

公开(公告)号：US20140360536A1

公开(公告)日：2014-12-11

申请号：US14296813

申请日：2014-06-05

申请人： Tokyo Electron Limited

发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC分类号： H01L21/67

CPC分类号： H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

摘要翻译： 可以提高处理基板的生产量，并且可以降低其运行成本。 用处理液处理基板3并干燥基板3的基板处理装置1包括：基板旋转装置22，被配置为旋转基板3; 将处理液朝向基板3排出的处理液排出部13; 置换液体排出单元14，被配置为在衬底3上被处理液取代的取代液体相对于衬底3相对移动而朝向衬底3排出; 以及惰性气体排出单元15，其构造成在与替代液体排出单元14的移动方向不同的方向上移动，同时从基板3的上方沿倾斜方向朝向基板3的周边部分排出惰性气体。

公开(公告)号：US08794250B2

公开(公告)日：2014-08-05

申请号：US13693712

申请日：2012-12-04

申请人： Tokyo Electron Limited

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： H01L21/306 ,  C23F1/00 ,  G11B31/00

CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US20140137902A1

公开(公告)日：2014-05-22

申请号：US14084839

申请日：2013-11-20

申请人： Tokyo Electron Limited

发明人： Kazuhiro Aiura ,  Norihiro Ito ,  Hidetoshi Nakao ,  Kazuyoshi Shinohara ,  Satoru Tanaka ,  Yuki Yoshida ,  Meitoku Aibara

IPC分类号： H01L21/67

CPC分类号： H01L21/67051 ,  H01L21/68735

摘要： A substrate processing apparatus includes a rotary cup that is provided at a substrate holding unit to surround a substrate held thereon and to be rotated along with the substrate holding unit, and configured to guide a processing liquid dispersed from the substrate; and an outer cup that is provided around the rotary cup with a gap therebetween and configured to collect the guided processing liquid by the rotary cup. Further, a height of an upper end of the rotary cup is higher than that of the outer cup. Furthermore, an outward protrusion protruded outwards in a radial direction thereof and extended along a circumference thereof is provided at an upper end portion of an outer surface of the rotary cup, and the outward protrusion blocks mist of the processing liquid dispersed from the gap between the rotary cup and the outer cup toward a space above the substrate.

摘要翻译： 一种基板处理装置，包括旋转杯，该旋转杯设置在基板保持单元处，以围绕保持在其上的基板并与基板保持单元一起旋转，并且构造成引导从基板分散的处理液; 以及外杯，其设置在旋转杯周围，其间具有间隙，并且构造成通过旋转杯收集被引导的处理液。 此外，旋转杯的上端的高度高于外杯的高度。 此外，在旋转杯的外表面的上端部设置有沿其径向向外突出并且沿着其周向延伸的向外突出部，并且向外突出部阻挡从位于旋转杯之间的间隙分散的处理液的雾 旋转杯和外杯朝向衬底上方的空间。

公开(公告)号：US20130133695A1

公开(公告)日：2013-05-30

申请号：US13687142

申请日：2012-11-28

申请人： Tokyo Electron Limited

发明人： Teruomi Minami ,  Satoru Tanaka ,  Tatsuya Nagamatsu ,  Hiroyuki Suzuki ,  Yosuke Kawabuchi ,  Tsukasa Hirayama ,  Katsufumi Matsuki

IPC分类号： B08B3/04

CPC分类号： B08B3/04 ,  H01L21/67034

摘要： A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.

摘要翻译： 在基板上进行化学液体处理。 然后，进行向基板供给冲洗液的冲洗处理。 此后，在旋转基板的同时进行干燥基板的干燥处理。 干燥过程包括以第一转速旋转衬底的第一干燥过程; 第二干燥处理，其在第一干燥处理之后将基板的转速降低到低于第一转速的第二转速。 在第二干燥过程中，冲洗液和干燥溶液在产生制动效果的同时进行搅拌和取代。 在第三干燥处理中，在第二次干燥处理之后，基板的转速从第二转速增加到第三转速。 此后，在第四干燥过程中，通过旋转基板将基板上的干燥溶液散开。

公开(公告)号：US10192758B2

公开(公告)日：2019-01-29

申请号：US15713800

申请日：2017-09-25

申请人： Tokyo Electron Limited

发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC分类号： H01L21/02 ,  H01L21/67

摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

公开(公告)号：US09321085B2

公开(公告)日：2016-04-26

申请号：US13687142

申请日：2012-11-28

申请人： Tokyo Electron Limited

发明人： Teruomi Minami ,  Satoru Tanaka ,  Tatsuya Nagamatsu ,  Hiroyuki Suzuki ,  Yosuke Kawabuchi ,  Tsukasa Hirayama ,  Katsufumi Matsuki

IPC分类号： B08B3/04 ,  B08B7/04 ,  H01L21/67

CPC分类号： B08B3/04 ,  H01L21/67034

摘要： A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.

摘要翻译： 在基板上进行化学液体处理。 然后，进行向基板供给冲洗液的冲洗处理。 此后，在旋转基板的同时进行干燥基板的干燥处理。 干燥过程包括以第一转速旋转衬底的第一干燥过程; 第二干燥处理，其在第一干燥处理之后将基板的转速降低到低于第一转速的第二转速。 在第二干燥过程中，冲洗液和干燥溶液在产生制动效果的同时进行搅拌和取代。 在第三干燥处理中，在第二次干燥处理之后，基板的转速从第二转速增加到第三转速。 此后，在第四干燥过程中，通过旋转基板将基板上的干燥溶液散开。

公开(公告)号：US20230022814A1

公开(公告)日：2023-01-26

申请号：US17814267

申请日：2022-07-22

申请人： Tokyo Electron Limited

发明人： Saya Inoue ,  Satoru Tanaka ,  Shinichiro Shimomura ,  Toru Ihara ,  Satoshi Biwa

IPC分类号： H01L21/67

摘要： A substrate processing method of drying a substrate by using a processing fluid in a supercritical state is performed by a substrate processing apparatus. The substrate processing apparatus includes a fluid discharge unit, a supply line, a fluid drain unit, a drain line and a flow control device. The substrate processing method includes: flowing the processing fluid from the fluid discharge unit to the fluid drain unit such that the processing fluid flows along a surface of the substrate. The flowing of the processing fluid includes flowing the processing fluid in a first flow mode and flowing the processing fluid in a second flow mode. Between the first flow mode and the second flow mode, a flow direction distribution of the processing fluid is different, and a switchover between the first flow mode and the second flow mode is performed by the flow control device.

公开(公告)号：US20190355574A1

公开(公告)日：2019-11-21

申请号：US16411404

申请日：2019-05-14

申请人： Tokyo Electron Limited

发明人： Itaru Kanno ,  Hiromi Kiyose ,  Gentaro Goshi ,  Naohiko Hamamura ,  Takuro Masuzumi ,  Kenji Sekiguchi ,  Satoru Tanaka ,  Teruomi Minami

IPC分类号： H01L21/02 ,  H01L21/67 ,  F26B3/28

摘要： A substrate processing method capable of suppressing particles from remaining on a surface of a substrate is provided. In the substrate processing method, a liquid film of a protection liquid is formed on the surface of the substrate, and the substrate is dried by using a supercritical fluid so that the protection liquid is removed from the surface of the substrate. After the substrate is dried, the particles remaining on the surface of the substrate is removed.

公开(公告)号：US09805957B2

公开(公告)日：2017-10-31

申请号：US14296813

申请日：2014-06-05

申请人： Tokyo Electron Limited

发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

IPC分类号： H01L21/67 ,  H01L21/02

CPC分类号： H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.