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    Substrate drying apparatus, substrate drying method and storage medium
    1.
    发明授权
    Substrate drying apparatus, substrate drying method and storage medium 有权

    公开(公告)号：US11854815B2

    公开(公告)日：2023-12-26

    申请号：US16962742

    申请日：2019-01-28

    申请人： TOKYO ELECTRON LIMITED

    发明人： Yosuke Kawabuchi

    IPC分类号： H01L21/304 ,  F26B3/24 ,  F26B21/10

    CPC分类号： H01L21/304 ,  F26B3/24 ,  F26B21/10

    摘要： A substrate drying apparatus, a substrate drying method and a storage medium are capable of sublimating a sublimable substance filled in recesses of a pattern formed on a substrate while preventing pattern collapse. A first unit includes a solution supplier which supplies a sublimable substance solution containing a sublimable substance and a solvent to a processing surface, and a first liquid remover which forms a solid film of the sublimable substance on the processing surface by removing the solvent and a processing liquid from the processing surface. A second unit includes a second liquid remover which vaporize the solvent and the processing liquid remaining in the solid film by heating the substrate, and maintaining the substrate at a temperature within a first temperature range, and a solid film remover which remove the solid film from the processing surface by heating the substrate at a temperature within a second temperature range.

    SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND COMPUTER-READABLE STORAGE MEDIUM RECORDING THEREIN SUBSTRATE PROCESSING PROGRAM
    7.
    发明申请
    SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND COMPUTER-READABLE STORAGE MEDIUM RECORDING THEREIN SUBSTRATE PROCESSING PROGRAM 有权
    基板处理装置，基板处理方法和计算机可读存储介质基板处理程序

    公开(公告)号：US20140360536A1

    公开(公告)日：2014-12-11

    申请号：US14296813

    申请日：2014-06-05

    申请人： Tokyo Electron Limited

    发明人： Yosuke Kawabuchi ,  Hisashi Kawano ,  Satoru Tanaka ,  Hiroyuki Suzuki ,  Kotaro Oishi ,  Kazuyoshi Shinohara ,  Yuki Yoshida

    IPC分类号： H01L21/67

    CPC分类号： H01L21/67051 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/6715

    摘要： A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing liquid discharging unit 13 configured to discharge the processing liquid toward the substrate 3; a substitution liquid discharging unit 14 configured to discharge a substitution liquid, which is substituted with the processing liquid on the substrate 3, toward the substrate 3 while relatively moving with respect to the substrate 3; and an inert gas discharging unit 15 configured to discharge an inert gas toward a peripheral portion of the substrate 3 in an inclined direction from above the substrate 3 while moving in a direction different from a direction in which the substitution liquid discharging unit 14 is moved.

    摘要翻译： 可以提高处理基板的生产量，并且可以降低其运行成本。 用处理液处理基板3并干燥基板3的基板处理装置1包括：基板旋转装置22，被配置为旋转基板3; 将处理液朝向基板3排出的处理液排出部13; 置换液体排出单元14，被配置为在衬底3上被处理液取代的取代液体相对于衬底3相对移动而朝向衬底3排出; 以及惰性气体排出单元15，其构造成在与替代液体排出单元14的移动方向不同的方向上移动，同时从基板3的上方沿倾斜方向朝向基板3的周边部分排出惰性气体。

    SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR IMPLEMENTING SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
    8.
    发明申请
    SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM STORING COMPUTER PROGRAM FOR IMPLEMENTING SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
    基板处理方法，用于实施基板处理方法和基板处理装置的存储中央存储计算机程序

    公开(公告)号：US20130133695A1

    公开(公告)日：2013-05-30

    申请号：US13687142

    申请日：2012-11-28

    申请人： Tokyo Electron Limited

    发明人： Teruomi Minami ,  Satoru Tanaka ,  Tatsuya Nagamatsu ,  Hiroyuki Suzuki ,  Yosuke Kawabuchi ,  Tsukasa Hirayama ,  Katsufumi Matsuki

    IPC分类号： B08B3/04

    CPC分类号： B08B3/04 ,  H01L21/67034

    摘要： A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.

    摘要翻译： 在基板上进行化学液体处理。 然后，进行向基板供给冲洗液的冲洗处理。 此后，在旋转基板的同时进行干燥基板的干燥处理。 干燥过程包括以第一转速旋转衬底的第一干燥过程; 第二干燥处理，其在第一干燥处理之后将基板的转速降低到低于第一转速的第二转速。 在第二干燥过程中，冲洗液和干燥溶液在产生制动效果的同时进行搅拌和取代。 在第三干燥处理中，在第二次干燥处理之后，基板的转速从第二转速增加到第三转速。 此后，在第四干燥过程中，通过旋转基板将基板上的干燥溶液散开。

    Substrate processing apparatus
    10.
    发明授权
    Substrate processing apparatus 有权

    公开(公告)号：US10692739B2

    公开(公告)日：2020-06-23

    申请号：US15907522

    申请日：2018-02-28

    申请人： Tokyo Electron Limited

    发明人： Yosuke Kawabuchi ,  Gentaro Goshi ,  Keisuke Egashira ,  Hiroki Ohno ,  Hiroshi Marumoto ,  Takuro Masuzumi ,  Kento Tsukano ,  Shotaro Kitayama

    IPC分类号： F26B5/08 ,  H01L21/67 ,  F26B5/00 ,  H01L21/02 ,  F26B21/14

    摘要： A substrate processing apparatus according to an exemplary embodiment to the present disclosure includes: a main body which has therein a processing space capable of accommodating the substrate; a holding unit which holds the substrate in the main body; a supply unit which is provided at a side of the substrate held by the holding unit and supplies the processing fluid into the processing space; a discharge unit which discharges the processing fluid from an inside of the processing space; and a flow path limiting unit which limits a lower end of a flow path at an upstream side which is formed while the processing fluid flows from the supply unit to the discharge unit. Further, an upper end of the flow path limiting unit is disposed at a position higher than the upper surface of the substrate held by the holding unit.