公开(公告)号：US11807836B2

公开(公告)日：2023-11-07

申请号：US17281712

申请日：2019-09-30

Applicant: TOKUYAMA CORPORATION

Inventor： Shunsuke Hosaka ,  Masanari Ishizuki

IPC: C11D7/50 ,  C11D7/26 ,  C07C29/80 ,  C11D11/00

CPC classification number: C11D7/261 ,  C07C29/80 ,  C11D7/5022 ,  C11D11/0047

Abstract: Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis. Also provided is a method for manufacturing said high-purity isopropyl alcohol.

公开(公告)号：US11905499B2

公开(公告)日：2024-02-20

申请号：US17281712

申请日：2019-09-30

Applicant: TOKUYAMA CORPORATION

Inventor： Shunsuke Hosaka ,  Masanari Ishizuki

IPC: C11D7/50 ,  C11D7/26 ,  C07C29/80 ,  C11D11/00

CPC classification number: C11D7/261 ,  C07C29/80 ,  C11D7/5022 ,  C11D11/0047

Abstract: Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis. Also provided is a method for manufacturing said high-purity isopropyl alcohol.

公开(公告)号：US20230121726A1

公开(公告)日：2023-04-20

申请号：US17915189

申请日：2021-03-30

Applicant: TOKUYAMA CORPORATION

Inventor： Masashi Shinagawa ,  Takashi Tokunaga ,  Yuu Mishima ,  Shunsuke Hosaka

IPC: C11D7/50 ,  C11D11/00 ,  C11D7/26 ,  C07C29/82

Abstract: Provided are: a semiconductor treatment liquid comprising high-purity isopropyl alcohol, wherein the concentration of the oxolane compound expressed in formula (1) below when held for 60 days in a nitrogen atmosphere at 50° C. in a SUS304 container is 25 ppb or less on a mass basis in relation to the isopropyl alcohol; and a method for manufacturing said semiconductor treatment liquid. In the formula, R1 and R2 each independently represent a hydrogen atom or a C1-3 alkyl group, and the total number of carbon atoms in R1 and R2 is 3 or less. R3 represents a hydrogen atom or an isopropyl group.

公开(公告)号：US20220002641A1

公开(公告)日：2022-01-06

申请号：US17281712

申请日：2019-09-30

Applicant: TOKUYAMA CORPORATION

Inventor： Shunsuke Hosaka ,  Masanari Ishizuki

IPC: C11D7/26 ,  C07C29/80 ,  C11D7/50 ,  C11D11/00

Abstract: Provided is a high-purity isopropyl alcohol in which the concentration of a C7-12 acetal compound is 100 ppb or less on a mass basis, the concentration of the acetal compound in an accelerated test involving heating for 4 hours at 80° C. in a nitrogen atmosphere is increased by a factor of 30 or less with respect to the value thereof prior to heating, and the concentration of the acetal compound is maintained at a value of 100 ppb or less on a mass basis. Also provided is a method for manufacturing said high-purity isopropyl alcohol.