公开(公告)号：US20040131537A1

公开(公告)日：2004-07-08

申请号：US10642043

申请日：2003-08-15

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Peidong Yang ,  Matthew Law ,  Rongrui He ,  Rong Fan ,  Franklin Kim

IPC: B32B009/04

CPC classification number: B81B3/0035 ,  B82Y20/00 ,  B82Y25/00 ,  B82Y30/00 ,  C30B23/00 ,  C30B29/605 ,  H01L21/02414 ,  H01L21/02428 ,  H01L21/02521 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/0259 ,  H01L21/02631 ,  Y10S977/755 ,  Y10S977/81 ,  Y10S977/811 ,  Y10T428/125 ,  Y10T428/29 ,  Y10T428/2973 ,  Y10T428/298

Abstract: A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. A method for making the nanotape that includes providing plural substrates and placing the substrates in a quartz tube is also described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons can be made from materials such as SnO2, ZnO, MgO, Al2O3, Si, GaN, or CdS. Also, the sintered oxide target can be made from materials such as TiO2, transition metal doped TiO2 (e.g., CO0.05Ti0.95O2), BaTiO3, ZnO, transition metal doped ZnO (e.g., Mn0.1Zn0.9O and Ni0.1Zn0.9O), LaMnO3, BaTiO3, PbTiO3, YBa2Cu3Oz, or SrCu2O2 and other p-type oxides. Additionally, temperature sensitive nanoribbon/metal bilayers and their method of fabrication by thermal evaporation are described. Metals such as Cu, Au, Ti, Al, Pt, Ni and others can be deposited on top of the nanoribbon surface. Such devices bend significantly as a function of temperature and are suitable as, for example, thermally activated nanoscale actuators.

Abstract translation: 描述了包括纳米薄片基底和外延沉积在纳米薄片的平坦表面上的氧化物的双层纳米线。 还描述了一种制造纳米线的方法，其包括提供多个基板并将基板放置在石英管中。 氧化物使用脉冲激光烧蚀沉积工艺沉积在衬底上。 纳米带可以由诸如SnO 2，ZnO，MgO，Al 2 O 3，Si，GaN或CdS的材料制成。 此外，烧结氧化物靶可以由诸如TiO 2，过渡金属掺杂的TiO 2（例如，CO 0.05 Ti 0.95 O 2），BaTiO 3，ZnO，过渡金属掺杂的ZnO（例如Mn0.1Zn0.9O和Ni0.1Zn0）的材料制成。 9O），LaMnO3，BaTiO3，PbTiO3，YBa2Cu3Oz或SrCu2O2等p型氧化物。 另外，描述了温度敏感的纳米棒/金属双层及其通过热蒸发制造的方法。 诸如Cu，Au，Ti，Al，Pt，Ni等的金属可以沉积在纳米棒表面的顶部。 这样的装置作为温度的函数显着弯曲，并且适合于例如热活化的纳米级致动器。

公开(公告)号：US20030121764A1

公开(公告)日：2003-07-03

申请号：US10032698

申请日：2001-12-27

Applicant: The Regents of the University of California

Inventor： Peidong Yang ,  Hannes Kind ,  Haoquan Yan ,  Matthew Law ,  Benjamin Messer

IPC: H01H001/02 ,  G02B006/26 ,  G02B006/35

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C13/04 ,  G11C2213/16 ,  Y10S977/932

Abstract: A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.

Abstract translation: 纳米线切换装置及方法。 该装置具有纳米线结构，该纳米线结构包括具有约1纳米但小于约500纳米的横截面积的细长构件，但是也可以在其它尺寸上变化或基本上恒定，或者这些的任何组合。 该器件还具有耦合到纳米线结构的第一部分的第一端子; 以及耦合到所述纳米线结构的第二部分的第二端子。 纳米线结构的第二部分从纳米线结构的第一部分空间上放置。 有源表面结构耦合到纳米线结构。 主动表面结构沿着细长构件从第一部分延伸到第二部分。