HALL SENSOR WITH MAGNETIC FLUX CONCENTRATOR
    1.
    发明公开

    公开(公告)号:US20240329164A1

    公开(公告)日:2024-10-03

    申请号:US18193099

    申请日:2023-03-30

    CPC classification number: G01R33/077 G01R33/0011 H10N52/01 H10N52/80

    Abstract: The present disclosure generally relates to magnetic field sensors with magnetic flux concentrators, and more particularly, to Hall sensors (which may be vertical or in-plane field Hall sensors) with magnetic flux concentrators. In an example, a sensor device includes a semiconductor die, a first magnetic flux concentrator, and a second magnetic flux concentrator. The semiconductor die includes a semiconductor substrate and an interconnect structure. The semiconductor substrate includes a Hall sensor in a semiconductor material. The interconnect structure is over the semiconductor substrate. The first magnetic flux concentrator is over the semiconductor die. The second magnetic flux concentrator is over the semiconductor die. At least part of the Hall sensor is laterally between the first magnetic flux concentrator and the second magnetic flux concentrator.

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