公开(公告)号：US20200287033A1

公开(公告)日：2020-09-10

申请号：US16294687

申请日：2019-03-06

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Chang Soo SUH ,  Sameer Prakash PENDHARKAR ,  Naveen TIPIRNENI ,  Jungwoo JOH

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L21/02 ,  H01L21/308 ,  H01L29/417 ,  H01L29/423

Abstract: In some examples, a gallium nitride (GaN)-based transistor, comprises a substrate; a GaN layer supported by the substrate; an aluminum nitride gallium (AlGaN) layer supported by the GaN layer; a p-doped GaN structure supported by the AlGaN layer; and multiple p-doped GaN blocks supported by the AlGaN layer, each of the multiple p-doped GaN blocks physically separated from the remaining multiple p-doped GaN blocks, wherein first and second contours of a two-dimensional electron gas (2DEG) of the GaN-based transistor are at an interface of the AlGaN and GaN layers.

公开(公告)号：US20200303535A1

公开(公告)日：2020-09-24

申请号：US16895111

申请日：2020-06-08

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jungwoo JOH ,  Naveen TIPIRNENI ,  Chang Soo SUH ,  Sameer PENDHARKAR

IPC: H01L29/778 ,  H01L21/265 ,  H01L21/266 ,  H01L21/308 ,  H01L29/06 ,  H01L29/08 ,  H01L29/20 ,  H01L29/417 ,  H01L29/66

Abstract: A High Electron Mobility Transistor (HEMT) includes an active layer on a substrate, and a Group IIIA-N barrier layer on the active layer. An isolation region is through the barrier layer to provide at least one isolated active area including the barrier layer on the active layer. A gate is over the barrier layer. A drain includes at least one drain finger including a fingertip having a drain contact extending into the barrier layer to contact to the active layer and a source having a source contact extending into the barrier layer to contact to the active layer. The source forms a loop that encircles the drain. The isolation region includes a portion positioned between the source and drain contact so that there is a conduction barrier in a length direction between the drain contact of the fingertip and the source.

公开(公告)号：US20180151713A1

公开(公告)日：2018-05-31

申请号：US15864157

申请日：2018-01-08

Applicant: Texas Instruments Incorporated

Inventor： Jungwoo JOH ,  Naveen TIPIRNENI ,  Chang Soo SUH ,  Sameer PENDHARKAR

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/417 ,  H01L29/20 ,  H01L29/08 ,  H01L21/265 ,  H01L29/06 ,  H01L21/308 ,  H01L21/266

Abstract: A High Electron Mobility Transistor (HEMT) includes an active layer on a substrate, and a Group IIIA-N barrier layer on the active layer. An isolation region is through the barrier layer to provide at least one isolated active area including the barrier layer on the active layer. A gate is over the barrier layer. A drain includes at least one drain finger including a fingertip having a drain contact extending into the barrier layer to contact to the active layer and a source having a source contact extending into the barrier layer to contact to the active layer. The source forms a loop that encircles the drain. The isolation region includes a portion positioned between the source and drain contact so that there is a conduction barrier in a length direction between the drain contact of the fingertip and the source.

公开(公告)号：US20210280702A1

公开(公告)日：2021-09-09

申请号：US17330012

申请日：2021-05-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Chang Soo SUH ,  Sameer Prakash PENDHARKAR ,  Naveen TIPIRNENI ,  Jungwoo JOH

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L21/308 ,  H01L29/417 ,  H01L21/02

Abstract: In some examples, a gallium nitride (GaN)-based transistor, comprises a substrate; a GaN layer supported by the substrate; an aluminum nitride gallium (AlGaN) layer supported by the GaN layer; a p-doped GaN structure supported by the AlGaN layer; and multiple p-doped GaN blocks supported by the AlGaN layer, each of the multiple p-doped GaN blocks physically separated from the remaining multiple p-doped GaN blocks, wherein first and second contours of a two-dimensional electron gas (2DEG) of the GaN-based transistor are at an interface of the AlGaN and GaN layers.