公开(公告)号：US20200135486A1

公开(公告)日：2020-04-30

申请号：US16170539

申请日：2018-10-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： CHUN-HUNG LIAO ,  CHUNG-WEI HSU ,  TSUNG-LING TSAI ,  CHEN-HAO WU ,  CHU-AN LEE ,  SHEN-NAN LEE ,  TENG-CHUN TSAI ,  HUANG-LIN CHAO

IPC: H01L21/3105 ,  C09G1/02 ,  H01L21/306 ,  C09K3/14

Abstract: The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.