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公开(公告)号：US20230290641A1
公开(公告)日：2023-09-14
申请号：US18319454
申请日：2023-05-17
Inventor： CHUN-HUNG LIAO , CHUNG-WEI HSU , TSUNG-LING TSAI , CHEN-HAO WU , AN-HSUAN LEE , SHEN-NAN LEE , TENG-CHUN TSAI , HUANG-LIN CHAO
IPC: H01L21/3105 , C09K3/14 , H01L21/306 , C09G1/02 , H01L21/3063 , H01L21/311 , H01L21/02 , C23F1/12
CPC classification number: H01L21/31053 , C09K3/1409 , H01L21/30625 , C09G1/02 , H01L21/3063 , H01L21/31111 , H01L21/02019 , C23F1/12 , H01L21/31055
Abstract: The present disclosure provides a method for manufacturing a semiconductor. The method includes: forming a metal oxide layer over a gate structure over a substrate; forming a dielectric layer over the metal oxide layer; forming a metal layer over the metal oxide layer; and performing a chemical mechanical polish (CMP) operation to remove a portion of the dielectric layer and a portion of the metal layer, the CMP operation stopping at the metal oxide layer, wherein a slurry used in the CMP operation includes a ceria compound. The present disclosure also provides a method for planarizing a metal-dielectric surface.
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公开(公告)号：US20200135486A1
公开(公告)日：2020-04-30
申请号：US16170539
申请日：2018-10-25
Inventor： CHUN-HUNG LIAO , CHUNG-WEI HSU , TSUNG-LING TSAI , CHEN-HAO WU , CHU-AN LEE , SHEN-NAN LEE , TENG-CHUN TSAI , HUANG-LIN CHAO
IPC: H01L21/3105 , C09G1/02 , H01L21/306 , C09K3/14
Abstract: The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.
