公开(公告)号：US11961738B2

公开(公告)日：2024-04-16

申请号：US17175366

申请日：2021-02-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chin-Ta Chen ,  Hua-Tai Lin ,  Han-Wei Wu ,  Jiann-Yuan Huang

IPC: H01L21/027 ,  H01L21/3213

CPC classification number: H01L21/0274 ,  H01L21/32139

Abstract: In a method of forming a pattern, a first pattern is formed over an underlying layer, the first pattern including main patterns and a lateral protrusion having a thickness of less than 25% of a thickness of the main patterns, a hard mask layer is formed over the first pattern, a planarization operation is performed to expose the first pattern without exposing the lateral protrusion, a hard mask pattern is formed by removing the first pattern while the lateral protrusion being covered by the hard mask layer, and the underlying layer is patterned using the hard mask pattern as an etching mask.