公开(公告)号：US09832399B2

公开(公告)日：2017-11-28

申请号：US15009836

申请日：2016-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu Wei ,  Chin-Hsun Hsiao ,  Po-Chun Chiu ,  Yu-Hsuan Cheng ,  Yung-Lung Hsu ,  Hsin-Chi Chen ,  Ching-Ling Cheng

IPC: H01L31/062 ,  H04N5/359 ,  H04N5/374 ,  H04N5/232 ,  H01L27/146

CPC classification number: H04N5/359 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H04N5/23212 ,  H04N5/374

Abstract: An image sensor including a substrate, a trench isolation, a plurality of image sensing units, at least one phase detection unit, and an interconnection layer is provided. The trench isolation is in the substrate, and a plurality of active areas of the substrate are separated from each other by the trench isolation. The image sensing units and the at least one phase detection unit are in the active areas arranged in an array, and a sensing area of the at least one phase detection unit is smaller than a sensing area of each of the image sensing units. The interconnection layer is disposed on the image sensing units and the at least one phase detection unit. In addition, a method of fabricating an image sensor is also provided.

公开(公告)号：US09893107B2

公开(公告)日：2018-02-13

申请号：US14857657

申请日：2015-09-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu Wei ,  Hsin-Chi Chen ,  Ssu-Chiang Weng ,  Yung-Lung Hsu ,  Yen-Liang Lin ,  Chin-Hsun Hsiao

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14689

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a light sensing feature, a negative oxide layer, a gate dielectric layer and a transfer gate. The light sensing feature is configured in the substrate to detect an incoming radiation. The negative oxide layer is over the light sensing feature. The gate dielectric layer is over the negative oxide layer. The transfer gate is over the gate dielectric layer.

公开(公告)号：US20170223285A1

公开(公告)日：2017-08-03

申请号：US15009836

申请日：2016-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu Wei ,  Chin-Hsun Hsiao ,  Po-Chun Chiu ,  Yu-Hsuan Cheng ,  Yung-Lung Hsu ,  Hsin-Chi Chen ,  Ching-Ling Cheng

IPC: H04N5/359 ,  H04N5/232 ,  H01L27/146 ,  H04N5/374

CPC classification number: H04N5/359 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H04N5/23212 ,  H04N5/374

Abstract: An image sensor including a substrate, a trench isolation, a plurality of image sensing units, at least one phase detection unit, and an interconnection layer is provided. The trench isolation is in the substrate, and a plurality of active areas of the substrate are separated from each other by the trench isolation. The image sensing units and the at least one phase detection unit are in the active areas arranged in an array, and a sensing area of the at least one phase detection unit is smaller than a sensing area of each of the image sensing units. The interconnection layer is disposed on the image sensing units and the at least one phase detection unit. In addition, a method of fabricating an image sensor is also provided.