公开(公告)号：US06551483B1

公开(公告)日：2003-04-22

申请号：US09853959

申请日：2001-05-10

申请人： Steven T. Mayer ,  Jonathan Reid ,  Robert Contolini

发明人： Steven T. Mayer ,  Jonathan Reid ,  Robert Contolini

IPC分类号： C25D2112

CPC分类号： H01L21/2885 ,  C25D5/18 ,  C25D7/123

摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

摘要翻译： 控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。 提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。 还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。 对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。 用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。

公开(公告)号：US06562204B1

公开(公告)日：2003-05-13

申请号：US09854230

申请日：2001-05-10

申请人： Steven T. Mayer ,  Jonathan Reid ,  Robert Contolini

发明人： Steven T. Mayer ,  Jonathan Reid ,  Robert Contolini

IPC分类号： B23H302

CPC分类号： H01L21/2885 ,  C25D5/18 ,  C25D7/123

摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

摘要翻译： 控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。 提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。 还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。 对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。 用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。

公开(公告)号：US07211175B1

公开(公告)日：2007-05-01

申请号：US10365577

申请日：2003-02-11

申请人： Steven T. Mayer ,  Jonathan Reid ,  Robert Contolini

发明人： Steven T. Mayer ,  Jonathan Reid ,  Robert Contolini

IPC分类号： C25B15/02 ,  C25D17/00

CPC分类号： C25D17/001 ,  C25D17/005 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76877

摘要： Controlled-potential electroplating provides an effective method of electroplating metals onto the surfaces of high aspect ratio recessed features of integrated circuit devices. Methods are provided to mitigate corrosion of a metal seed layer on recessed features due to contact of the seed layer with an electrolyte solution. The potential can also be controlled to provide conformal plating over the seed layer and bottom-up filling of the recessed features. For each of these processes, a constant cathodic voltage, pulsed cathodic voltage, or ramped cathodic voltage can be used. An apparatus for controlled-potential electroplating includes a reference electrode placed near the surface to be plated and at least one cathode sense lead to measure the potential at points on the circumference of the integrated circuit structure.

摘要翻译： 控制电位电镀提供了将金属电镀到集成电路器件的高纵横比凹陷特征的表面上的有效方法。 提供了一种方法，用于减轻由于种子层与电解质溶液的接触而导致的凹陷特征上的金属种子层的腐蚀。 还可以控制电位以在种子层上提供适形电镀，并且自下而上地填充凹陷特征。 对于这些处理中的每一个，可以使用恒定的阴极电压，脉冲阴极电压或斜坡阴极电压。 用于控制电位电镀的装置包括放置在待镀表面附近的参考电极和至少一个阴极检测引线，以测量集成电路结构的圆周上的点处的电位。

公开(公告)号：US06402923B1

公开(公告)日：2002-06-11

申请号：US09537467

申请日：2000-03-27

申请人： Steven T. Mayer ,  Richard Hill ,  Alain Harrus ,  Evan Patton ,  Robert Contolini ,  Steve Taatjes ,  Jon Reid

发明人： Steven T. Mayer ,  Richard Hill ,  Alain Harrus ,  Evan Patton ,  Robert Contolini ,  Steve Taatjes ,  Jon Reid

IPC分类号： C25D500

CPC分类号： C25D17/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  C25D17/12 ,  Y10S204/07

摘要： An electrochemical reactor is used to electrofill damascene architecture for integrated circuits. A shield is used to screen the applied field during electroplating operations to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film seed layer of copper on the wafer.

摘要翻译： 电化学反应器用于集成电路的大马士革结构。 在电镀操作期间使用屏蔽来屏蔽施加的场，以补偿沿着晶片半径的电位降。 屏蔽层在电解液中建立反向电位降，以克服晶片上铜的薄膜晶种层的电阻。