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1.发明授权Etching process, method of manufacturing electronic device, and method of manufacturing polarizing plate 有权蚀刻工艺，制造电子器件的方法以及制造偏振片的方法公开(公告)号：US09316771B2
公开(公告)日：2016-04-19
申请号：US14456944
申请日：2014-08-11
Applicant: Sony Corporation
Inventor： Masahiro Kaida , Yuu Kawaguchi
CPC classification number: G02B5/3025 , C23F4/00 , G02B5/3058 , H05K3/061 , H05K2203/058
Abstract: An etching process includes: forming a metal film on a substrate having a pattern formation region; forming a mask having a predetermined pattern on the metal film in the pattern formation region, and forming a resist film in part or all of a periphery of the pattern formation region; and dry-etching the metal film in the pattern formation region.
Abstract translation: 蚀刻工艺包括：在具有图案形成区域的基板上形成金属膜; 在图案形成区域中的金属膜上形成具有预定图案的掩模，并且在图案形成区域的周边部分或全部形成抗蚀剂膜; 并且在图案形成区域中干蚀刻金属膜。
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2.发明申请ETCHING PROCESS, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING POLARIZING PLATE 有权蚀刻工艺，制造电子器件的方法和制造极化板的方法公开(公告)号：US20150060396A1
公开(公告)日：2015-03-05
申请号：US14456944
申请日：2014-08-11
Applicant: Sony Corporation
Inventor： Masahiro Kaida , Yuu Kawaguchi
CPC classification number: G02B5/3025 , C23F4/00 , G02B5/3058 , H05K3/061 , H05K2203/058
Abstract: An etching process includes: forming a metal film on a substrate having a pattern formation region; forming a mask having a predetermined pattern on the metal film in the pattern formation region, and forming a resist film in part or all of a periphery of the pattern formation region; and dry-etching the metal film in the pattern formation region.
Abstract translation: 蚀刻工艺包括：在具有图案形成区域的基板上形成金属膜; 在图案形成区域中的金属膜上形成具有预定图案的掩模，并且在图案形成区域的周边部分或全部形成抗蚀剂膜; 并且在图案形成区域中干蚀刻金属膜。
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