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1.发明授权公开(公告)号：US11695087B2
公开(公告)日：2023-07-04
申请号：US17541353
申请日：2021-12-03
发明人： Kaifu Qiu , Yongqian Wang , Xinqiang Yang , Gang Chen
IPC分类号： H01L31/042 , H02S10/00 , H02S30/00 , H01L31/0224 , H01L31/0236 , H01L31/028 , H01L31/068
CPC分类号： H01L31/022441 , H01L31/028 , H01L31/02363 , H01L31/022466 , H01L31/0682
摘要： A back contact structure of a solar cell, includes: a silicon substrate, the silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately in the plurality of recesses, where each first conductive region includes a first dielectric layer and a first doped region which are disposed successively in the plurality of recesses, and each second conductive region includes a second doped region; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions.
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公开(公告)号：US11611007B1
公开(公告)日：2023-03-21
申请号：US17841628
申请日：2022-06-15
发明人： Wenhua Chen , Bao'an Wu , Xian Li , Gang Chen
IPC分类号： H01L31/05
摘要： A special-figure design ribbon for connecting back contact cells includes a body, a plurality of first solder joints, and a plurality of second solder joints. The plurality of first solder joints and the plurality of second solder joints are respectively located on two sides of the body in a width direction. Each of the first solder joints stretches outward from a first side of the body. Each of the second solder joints stretches outward from a second side of the body. A shape of each first solder joint is different from a shape of each second solder joint. Center lines of at least one set of the first solder joint and the second solder joint adjacent to each other are staggered from each other in the width direction of the body.
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公开(公告)号：US12074246B2
公开(公告)日：2024-08-27
申请号：US18216633
申请日：2023-06-30
发明人： Yongqian Wang , Ning Zhang , Wenli Xu , Gang Wang , Gang Chen
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/05
CPC分类号： H01L31/186 , H01L31/022425 , H01L31/05
摘要： A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.
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4.发明授权公开(公告)号：US11777045B2
公开(公告)日：2023-10-03
申请号：US17541332
申请日：2021-12-03
发明人： Kaifu Qiu , Yongqian Wang , Xinqiang Yang , Gang Chen
IPC分类号： H01L31/05 , H01L31/068
CPC分类号： H01L31/0516 , H01L31/068
摘要： A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate; a plurality of first doped regions disposed on the first dielectric layer and disposed inside the plurality of recesses; a plurality of second doped regions disposed on the first dielectric layer and disposed outside the plurality of recesses; a second dielectric layer disposed between the first doped regions and the second doped regions; and a conductive layer disposed on the first plurality of doped regions and the plurality of second doped regions.
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公开(公告)号：US11588060B1
公开(公告)日：2023-02-21
申请号：US17743492
申请日：2022-05-13
发明人： Yongqian Wang , Xinqiang Yang , Gang Chen
IPC分类号： H01L31/0224 , H01L31/02
摘要： The disclosure provides an electrode structure of a back contact cell, a back contact cell, a back contact cell module, and a back contact cell system. The electrode structure includes: first fingers, configured to collect a first polarity region; second fingers, configured to collect a second polarity region; a first busbar, disposed on a side of the back contact cell close to a first edge and connected to the first fingers; first pad points; and first connection electrodes, respectively connected to the first busbar and the first pad points. A distance between each of the first pad points and the first edge is greater than a distance between the first busbar and the first edge. The electrode structure can improve the reliability, reduce the costs, increase the product yield, and ensure excellent photoelectric conversion efficiency.
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6.发明授权公开(公告)号：US11450777B1
公开(公告)日：2022-09-20
申请号：US17540275
申请日：2021-12-02
发明人： Kaifu Qiu , Yongqian Wang , Xinqiang Yang , Gang Chen
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/068 , H01L31/028
摘要： A back contact structure includes: a silicon substrate including a back including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate, the first dielectric layer at least covering the plurality of recesses; a plurality of P-type doped regions and N-type doped regions disposed on the first dielectric layer and disposed alternately in the plurality of recesses; a second dielectric layer disposed between the plurality of P-type doped regions and the plurality of N-type doped regions; and a conductive layer disposed on the plurality of P-type doped regions and the plurality of N-type doped regions
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公开(公告)号：US11929441B2
公开(公告)日：2024-03-12
申请号：US17844709
申请日：2022-06-20
发明人： Yongqian Wang , Wenli Xu , Jianjun Zhang , Jianbo Hong , Gang Chen
IPC分类号： H01L31/0224 , H01L31/05 , H01L31/054
CPC分类号： H01L31/022425 , H01L31/05 , H01L31/0543
摘要： A conductive contact structure of a solar cell is provided, includes a substrate; a semiconductor region; and an electrode. The semiconductor region is disposed on or in the substrate. The electrode is disposed in the semiconductor region. The electrode includes a seed layer in contact with the semiconductor region. The seed layer includes an alloy material, and includes a main component and an improved component. The main component is one or more metals having an average refractive index lower than 2 and a wavelength in a range of 850-1200 nm, and the improved component includes any one or more of Mo, Ni, Ti, W, Cr, Mn, Pd, Bi, Nb, Ta, Pa, Si, and V.
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公开(公告)号：US11728454B1
公开(公告)日：2023-08-15
申请号：US17845962
申请日：2022-06-21
发明人： Yongqian Wang , Ning Zhang , Wenli Xu , Gang Wang , Gang Chen
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/05
CPC分类号： H01L31/186 , H01L31/022425 , H01L31/05
摘要： A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of to-be-connected ribbons; placing the plurality of to-be-connected ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using a heater to connect the plurality of ribbons to the plurality of back contact cells.
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公开(公告)号：US11489080B1
公开(公告)日：2022-11-01
申请号：US17509060
申请日：2021-10-24
发明人： Gang Chen , Wenli Xu , Kaifu Qiu , Yongqian Wang , Xinqiang Yang
IPC分类号： H01L31/0216 , H01L31/0236
摘要： The disclosure provides a passivated contact structure and a solar cell including the same, a cell assembly and a photovoltaic system. The passivated contact structure includes a first passivated contact region on a silicon substrate and a second passivated contact region on the first passivated contact region. The second passivated contact region has an opening connecting a conductive layer to the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The first passivation layer is a porous structure inlaid with the first doped layer and/or the second doped layer in a hole region. Utilizing the passivated contact structure provided in this invention, mitigates the serious recombination caused by metal directly contacting with silicon substrate.
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10.发明授权公开(公告)号：US12009440B2
公开(公告)日：2024-06-11
申请号：US18374819
申请日：2023-09-29
发明人： Gang Chen , Wenli Xu , Kaifu Qiu , Yongqian Wang , Xinqiang Yang
IPC分类号： H01L31/0216 , H01L31/0236 , H01L31/0352
CPC分类号： H01L31/02167 , H01L31/02363 , H01L31/035281
摘要： The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
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