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公开(公告)号:US11784622B2
公开(公告)日:2023-10-10
申请号:US16555901
申请日:2019-08-29
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
CPC分类号: H03H3/08 , B23K26/362 , H03H9/02559 , H03H9/02622 , H03H9/059 , H03H9/1064 , H03H9/1092 , H03H9/25 , G01N2291/0423 , H01L2224/16
摘要: Methods for making laser-marked packaged surface acoustic wave devices are provided. The method may include directly marking a surface of a piezoelectric substrate, where the opposite surface of the piezoelectric substrate includes a package structure encapsulating a surface acoustic wave device. The method may include exposing the surface of the piezoelectric substrate to light from a deep ultraviolet laser. By using a wavelength readily absorbed by the piezoelectric substrate, a relatively shallow marking may be made in the piezoelectric substrate. The markings may extend less than 1 micrometer into the piezoelectric substrate, and do not affect the structural integrity of the piezoelectric substrate or the operation of the packaged surface acoustic wave device.
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公开(公告)号:US11159137B2
公开(公告)日:2021-10-26
申请号:US16555985
申请日:2019-08-29
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
摘要: Methods of making packaged surface acoustic wave devices are provided. The method may include forming a photosensitive resin coat over a cavity-defining structure encapsulating a surface acoustic wave device. The photosensitive resin coat may be formed using a spin-coating process, and then patterned to form a desired shape. Portions of the photosensitive resin may be removed from areas near the edge of the die, to facilitate separation of a wafer into individual dies. The method may also include forming a conductive structure using a plating process, where the conductive structure is located between the resin coat and the cavity defining structure. The photosensitive resin can include a phenol resin. The packaged surface acoustic wave devices made using a photosensitive resin coat may be relatively thin, and may have a height of less than 220 micrometers.
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公开(公告)号:US20200076399A1
公开(公告)日:2020-03-05
申请号:US16555901
申请日:2019-08-29
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
摘要: Methods for making laser-marked packaged surface acoustic wave devices are provided. The method may include directly marking a surface of a piezoelectric substrate, where the opposite surface of the piezoelectric substrate includes a package structure encapsulating a surface acoustic wave device. The method may include exposing the surface of the piezoelectric substrate to light from a deep ultraviolet laser. By using a wavelength readily absorbed by the piezoelectric substrate, a relatively shallow marking may be made in the piezoelectric substrate. The markings may extend less than 1 micrometer into the piezoelectric substrate, and do not affect the structural integrity of the piezoelectric substrate or the operation of the packaged surface acoustic wave device.
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公开(公告)号:US20240243716A1
公开(公告)日:2024-07-18
申请号:US18531065
申请日:2023-12-06
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
CPC分类号: H03H3/08 , B23K26/362 , H03H9/02559 , H03H9/02622 , H03H9/059 , H03H9/1064 , H03H9/1092 , H03H9/25 , G01N2291/0423 , H01L2224/16
摘要: Laser-marked packaged surface acoustic wave devices are provided. The laser-marked packaged surface acoustic wave device may include a package structure encapsulating a surface acoustic wave device on a first side of a piezoelectric substrate. The opposite side of the piezoelectric substrate can be directly marked using a laser. The laser may be a deep ultraviolet laser. By directly marking the piezoelectric substrate itself, the use of a separate marking film can be avoided, making the packaged surface acoustic wave device thinner. When the laser has a wavelength readily absorbed by the piezoelectric substrate, a relatively shallow marking may be made in the piezoelectric substrate. The markings can extend less than 1 micrometer into the piezoelectric substrate, so as not to affect the structural integrity of the piezoelectric substrate or the operation of the packaged surface acoustic wave device.
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公开(公告)号:US20200076400A1
公开(公告)日:2020-03-05
申请号:US16555904
申请日:2019-08-29
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
摘要: Packaged surface acoustic wave devices are provided. The packaged surface acoustic wave devices are relatively thin and can have a height of less than 220 micrometers. The packaged surface acoustic wave device includes a photosensitive resin over a conductive structure which may be formed by a plating process. The conductive structure may overlie a cavity-defining structure encapsulating a surface acoustic wave device, the cavity-defining structure including walls and a roof. The photosensitive resin can include a phenol resin. The photosensitive resin can be relatively thin. Edge portions of a piezoelectric substrate can be free from the photosensitive resin.
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公开(公告)号:US11894824B2
公开(公告)日:2024-02-06
申请号:US16555860
申请日:2019-08-29
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
CPC分类号: H03H3/08 , B23K26/362 , H03H9/02559 , H03H9/02622 , H03H9/059 , H03H9/1064 , H03H9/1092 , H03H9/25 , G01N2291/0423 , H01L2224/16
摘要: Laser-marked packaged surface acoustic wave devices are provided. The laser-marked packaged surface acoustic wave device may include a package structure encapsulating a surface acoustic wave device on a first side of a piezoelectric substrate. The opposite side of the piezoelectric substrate can be directly marked using a laser. The laser may be a deep ultraviolet laser. By directly marking the piezoelectric substrate itself, the use of a separate marking film can be avoided, making the packaged surface acoustic wave device thinner. When the laser has a wavelength readily absorbed by the piezoelectric substrate, a relatively shallow marking may be made in the piezoelectric substrate. The markings can extend less than 1 micrometer into the piezoelectric substrate, so as not to affect the structural integrity of the piezoelectric substrate or the operation of the packaged surface acoustic wave device.
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公开(公告)号:US11777465B2
公开(公告)日:2023-10-03
申请号:US16555904
申请日:2019-08-29
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
CPC分类号: H03H3/08 , B23K26/362 , H03H9/02559 , H03H9/02622 , H03H9/059 , H03H9/1064 , H03H9/1092 , H03H9/25 , G01N2291/0423 , H01L2224/16
摘要: Packaged surface acoustic wave devices are provided. The packaged surface acoustic wave devices are relatively thin and can have a height of less than 220 micrometers. The packaged surface acoustic wave device includes a photosensitive resin over a conductive structure which may be formed by a plating process. The conductive structure may overlie a cavity-defining structure encapsulating a surface acoustic wave device, the cavity-defining structure including walls and a roof. The photosensitive resin can include a phenol resin. The photosensitive resin can be relatively thin. Edge portions of a piezoelectric substrate can be free from the photosensitive resin.
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公开(公告)号:US20220006439A1
公开(公告)日:2022-01-06
申请号:US17364242
申请日:2021-06-30
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
摘要: Methods of making packaged surface acoustic wave devices are provided. The method may include forming a photosensitive resin coat over a cavity-defining structure encapsulating a surface acoustic wave device. The photosensitive resin coat may be formed using a spin-coating process, and then patterned to form a desired shape. Portions of the photosensitive resin may be removed from areas near the edge of the die, to facilitate separation of a wafer into individual dies. The method may also include forming a conductive structure using a plating process, where the conductive structure is located between the resin coat and the cavity defining structure. The photosensitive resin can include a phenol resin. The packaged surface acoustic wave devices made using a photosensitive resin coat may be relatively thin, and may have a height of less than 220 micrometers.
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公开(公告)号:US11923817B2
公开(公告)日:2024-03-05
申请号:US17364242
申请日:2021-06-30
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
CPC分类号: H03H3/08 , B23K26/362 , H03H9/02559 , H03H9/02622 , H03H9/059 , H03H9/1064 , H03H9/1092 , H03H9/25 , G01N2291/0423 , H01L2224/16
摘要: Methods of making packaged surface acoustic wave devices are provided. The method may include forming a photosensitive resin coat over a cavity-defining structure encapsulating a surface acoustic wave device. The photosensitive resin coat may be formed using a spin-coating process, and then patterned to form a desired shape. Portions of the photosensitive resin may be removed from areas near the edge of the die, to facilitate separation of a wafer into individual dies. The method may also include forming a conductive structure using a plating process, where the conductive structure is located between the resin coat and the cavity defining structure. The photosensitive resin can include a phenol resin. The packaged surface acoustic wave devices made using a photosensitive resin coat may be relatively thin, and may have a height of less than 220 micrometers.
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公开(公告)号:US20200076402A1
公开(公告)日:2020-03-05
申请号:US16555985
申请日:2019-08-29
发明人: Li Ann Koo , Takashi Inoue , Vivian Sing Zhi Lee , Ping Yi Tan
摘要: Methods of making packaged surface acoustic wave devices are provided. The method may include forming a photosensitive resin coat over a cavity-defining structure encapsulating a surface acoustic wave device. The photosensitive resin coat may be formed using a spin-coating process, and then patterned to form a desired shape. Portions of the photosensitive resin may be removed from areas near the edge of the die, to facilitate separation of a wafer into individual dies. The method may also include forming a conductive structure using a plating process, where the conductive structure is located between the resin coat and the cavity defining structure. The photosensitive resin can include a phenol resin. The packaged surface acoustic wave devices made using a photosensitive resin coat may be relatively thin, and may have a height of less than 220 micrometers.
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