公开(公告)号：US20140124367A1

公开(公告)日：2014-05-08

申请号：US14128646

申请日：2012-04-25

申请人： Shuichi Takeuchi ,  Hisayuki Takasu ,  Asako Kaneko

发明人： Shuichi Takeuchi ,  Hisayuki Takasu ,  Asako Kaneko

IPC分类号： H01J37/30 ,  H01J37/16 ,  H01J37/305

CPC分类号： H01J37/3005 ,  G01N1/286 ,  G01N1/32 ,  H01J37/16 ,  H01J37/20 ,  H01J37/3056 ,  H01J2237/31 ,  H01J2237/31745

摘要： There is provided an apparatus as well as a method for polishing, observing, and additionally polishing a sample in a vacuum with a charged particle beam apparatus furnished with no other apparatus.The charged particle beam apparatus has a vacuum chamber equipped with a liquid bath containing an ion liquid and a supersonic vibration means. With the ion liquid kept in contact with a polishing target area of the sample, supersonic vibration is propagated in the ion liquid to polish the sample.Because the charged particle beam apparatus permits polishing, observation, and additional polishing of the sample in a vacuum without being furnished with any additional apparatus, throughput is improved and the effects of the atmosphere on the sample are prevented.

摘要翻译： 提供了一种装置以及用没有其他装置的带电粒子束装置在真空中抛光，观察和附加抛光样品的方法。 带电粒子束装置具有配备有含有离子液体和超音速振动装置的液体浴的真空室。 当离子液体与样品的抛光目标区域保持接触时，在离子液体中传播超音速振动以抛光样品。 由于带电粒子束装置允许在没有任何附加装置的情况下在真空中抛光，观察和附加抛光样品，因此提高了生产能力并防止了样品对样品的影响。

公开(公告)号：US20130220806A1

公开(公告)日：2013-08-29

申请号：US13883539

申请日：2011-11-02

申请人： Toru Iwaya ,  Hirobumi Muto ,  Hisayuki Takasu ,  Atsushi Kamino ,  Asako Kaneko

发明人： Toru Iwaya ,  Hirobumi Muto ,  Hisayuki Takasu ,  Atsushi Kamino ,  Asako Kaneko

IPC分类号： H01J37/20 ,  H01J37/30 ,  H01J37/305

CPC分类号： H01J37/3053 ,  H01J37/20 ,  H01J37/3005 ,  H01J37/3007 ,  H01J37/304 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/26

摘要： An ion milling device of the present invention is provided with a tilt stage (8) which is disposed in a vacuum chamber (15) and has a tilt axis parallel to a first axis orthogonal to an ion beam, a drive mechanism (9, 51) which has a rotation axis and a tilt axis parallel to a second axis orthogonal to the first axis and rotates or tilts a sample (3), and a switching unit which enables switching between a state in which the ion beam is applied while the sample is rotated or swung while the tilt stage is tilted, and a state in which the ion beams is applied while the tilt stage is brought into an untilted state and the sample is swung. Consequently, the ion milling device capable of performing cross-section processing and flat processing of the sample in the same vacuum chamber is implemented.

摘要翻译： 本发明的离子铣削装置设置有倾斜台（8），其设置在真空室（15）中并具有平行于与离子束正交的第一轴线的倾斜轴线，驱动机构（9,51 ），其具有旋转轴线和平行于与所述第一轴线正交的第二轴线的倾斜轴线，并且使样本（3）旋转或倾斜;以及切换单元，其能够在所述样本之间切换所述离子束的状态 在倾斜台倾斜时旋转或摆动，并且在倾斜台进入直到状态并且样品摆动的同时施加离子束的状态。 因此，实现了能够在相同的真空室中对样品进行横截面加工和平坦处理的离子铣削装置。

公开(公告)号：US20130240353A1

公开(公告)日：2013-09-19

申请号：US13988506

申请日：2011-11-21

申请人： Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

发明人： Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

IPC分类号： H01J37/305

CPC分类号： H01J37/3053 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/20207 ,  H01J2237/2802 ,  H01J2237/31745

摘要： The sample 3 is tilted/oscillated with respect to the optical axis (Z-axis) of the ion beam 2 to repeat tilt and tilt/restoration of a processing target surface 3a of the sample 3 between a surface state in which the processing target surface 3a of the sample 3 faces a tilt axis direction (Y-axis direction) and a tilted surface state in which a portion of the processing target surface 3a on the sample stage side protrudes in the tilt axis direction (Y-axis direction) than does a portion of the processing target surface 3 on the mask side, so that the processing target surface 3a is irradiated with the ion beam 2 at a low angle, and projections/recesses 63 derived from a void 61 or a dissimilar material 62 are suppressed. Accordingly, it is possible to suppress generation of projections/recesses derived from a void or dissimilar material in fabrication of a cross section sample, and thus fabricate a sample cross section suitable for observation/analysis.

摘要翻译： 样品3相对于离子束2的光轴（Z轴）倾斜/振荡，以在样品3的处理目标表面3a之间重叠倾斜和倾斜/恢复处理目标表面 样品3的3a面向倾斜轴方向（Y轴方向）和倾斜表面状态，其中样品台侧的处理对象表面3a的一部分在倾斜轴线方向（Y轴方向）上突出于倾斜轴方向 处理对象面3的掩模侧的一部分，使得处理对象面3a以低角度照射离子束2，抑制从空隙61或异种材料62得到的突起/凹部63。 因此，在横截面试样的制造中，可以抑制从空隙或异种材料得到的突起/凹部的产生，从而制造适于观察/分析的试样截面。

公开(公告)号：US20120298884A1

公开(公告)日：2012-11-29

申请号：US13575381

申请日：2011-01-26

申请人： Rie Nakajima ,  Koichi Kurosawa ,  Hisayuki Takasu

发明人： Rie Nakajima ,  Koichi Kurosawa ,  Hisayuki Takasu

IPC分类号： G21K5/10

CPC分类号： H01J37/28 ,  H01J37/20 ,  H01J37/3056 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20242 ,  H01J2237/3114

摘要： In view of the above-mentioned problems, an object of the present invention is to provide a processing method that is not dependent on the material or the ion beam irradiation angle. In order to achieve the object above, the present invention provides a processing device that processes a sample by irradiating the sample with an ion beam, the processing device comprising a sample tilting/rotating mechanism that rotates/tilts the sample relative to the ion beam, wherein the sample rotating mechanism comprises a rotating shaft that rotates the sample relative to the ion beam, and a tilting shaft that is orthogonal to the rotating shaft and that tilts the sample relative to the ion beam, the sample rotating mechanism being adapted to simultaneously perform the rotating and tilting of the sample.

摘要翻译： 鉴于上述问题，本发明的目的是提供一种不依赖于材料或离子束照射角度的处理方法。 为了实现上述目的，本发明提供了一种处理装置，其通过用离子束照射样品来处理样品，该处理装置包括使样品相对于离子束旋转/倾斜的样品倾斜/旋转机构， 其中，所述样本旋转机构包括使所述样本相对于所述离子束旋转的旋转轴和与所述旋转轴正交并使样本相对于所述离子束倾斜的倾斜轴，所述样本旋转机构适于同时执行 样品的旋转和倾斜。

公开(公告)号：US20060140624A1

公开(公告)日：2006-06-29

申请号：US11359483

申请日：2006-02-23

申请人： Hisayuki Takasu ,  Kouichi Miyazawa ,  Toru Iwaya

发明人： Hisayuki Takasu ,  Kouichi Miyazawa ,  Toru Iwaya

IPC分类号： G03D5/00

CPC分类号： G03D3/00

摘要： The present invention provides a resist development processor consisting of a development processing chamber for storing a resist substrate having an exposed resist on the substrate and for developing the exposed resist by means of a development solvent consisting of a supercritical fluid; and a supercritical fluid container for storing a supercritical fluid, where the supercritical fluid container is connected to the development processing chamber through a valve.

摘要翻译： 本发明提供了一种抗蚀剂显影处理器，其由显影处理室组成，该显影处理室用于在基板上存储具有曝光抗蚀剂的抗蚀剂基板，并通过由超临界流体构成的显影溶剂显影曝光的抗蚀剂; 以及用于储存超临界流体的超临界流体容器，其中超临界流体容器通过阀连接到显影处理室。

公开(公告)号：US07033089B2

公开(公告)日：2006-04-25

申请号：US10705845

申请日：2003-11-13

申请人： Hisayuki Takasu ,  Kouichi Miyazawa ,  Toru Iwaya

发明人： Hisayuki Takasu ,  Kouichi Miyazawa ,  Toru Iwaya

IPC分类号： G03D5/00

CPC分类号： G03D3/00

摘要： The present invention provides a resist development processor consisting of a development processing chamber for storing a resist substrate having an exposed resist on the substrate and for developing the exposed resist by means of a development solvent consisting of a supercritical fluid; and a supercritical fluid container for storing a supercritical fluid, where the supercritical fluid container is connected to the development processing chamber through a valve.

公开(公告)号：US09355817B2

公开(公告)日：2016-05-31

申请号：US13988506

申请日：2011-11-21

申请人： Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

发明人： Shunya Watanabe ,  Mami Konomi ,  Hisayuki Takasu ,  Atsushi Kamino

IPC分类号： C23C14/34 ,  H01J37/305 ,  H01J37/20

CPC分类号： H01J37/3053 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/20207 ,  H01J2237/2802 ,  H01J2237/31745

摘要： The sample 3 is tilted/oscillated with respect to the optical axis (Z-axis) of the ion beam 2 to repeat tilt and tilt/restoration of a processing target surface 3a of the sample 3 between a surface state in which the processing target surface 3a of the sample 3 faces a tilt axis direction (Y-axis direction) and a tilted surface state in which a portion of the processing target surface 3a on the sample stage side protrudes in the tilt axis direction (Y-axis direction) than does a portion of the processing target surface 3 on the mask side, so that the processing target surface 3a is irradiated with the ion beam 2 at a low angle, and projections/recesses 63 derived from a void 61 or a dissimilar material 62 are suppressed. Accordingly, it is possible to suppress generation of projections/recesses derived from a void or dissimilar material in fabrication of a cross section sample, and thus fabricate a sample cross section suitable for observation/analysis.

摘要翻译： 样品3相对于离子束2的光轴（Z轴）倾斜/振荡，以在样品3的处理目标表面3a之间重叠倾斜和倾斜/恢复处理目标表面 样品3的3a面向倾斜轴方向（Y轴方向）和倾斜表面状态，其中样品台侧的处理对象表面3a的一部分在倾斜轴线方向（Y轴方向）上突出于倾斜轴方向 处理对象面3的掩模侧的一部分，使得处理对象面3a以低角度照射离子束2，抑制从空隙61或异种材料62得到的突起/凹部63。 因此，在横截面试样的制造中，可以抑制从空隙或异种材料得到的突起/凹部的产生，从而制造适于观察/分析的试样截面。

公开(公告)号：US07179000B2

公开(公告)日：2007-02-20

申请号：US11359483

申请日：2006-02-23

申请人： Hisayuki Takasu ,  Kouichi Miyazawa ,  Toru Iwaya

发明人： Hisayuki Takasu ,  Kouichi Miyazawa ,  Toru Iwaya

IPC分类号： G03D5/00

CPC分类号： G03D3/00

摘要： The present invention provides a resist development processor consisting of a development processing chamber for storing a resist substrate having an exposed resist on the substrate and for developing the exposed resist by means of a development solvent consisting of a supercritical fluid; and a supercritical fluid container for storing a supercritical fluid, where the supercritical fluid container is connected to the development processing chamber through a valve.

摘要翻译： 本发明提供了一种抗蚀剂显影处理器，其由显影处理室组成，该显影处理室用于在基板上存储具有曝光抗蚀剂的抗蚀剂基板，并通过由超临界流体构成的显影溶剂显影曝光的抗蚀剂; 以及用于储存超临界流体的超临界流体容器，其中超临界流体容器通过阀连接到显影处理室。