Positive resist composition and pattern forming method
    5.
    发明授权
    Positive resist composition and pattern forming method 失效
    正抗蚀剂组成和图案形成方法

    公开(公告)号:US08088550B2

    公开(公告)日:2012-01-03

    申请号:US12181757

    申请日:2008-07-29

    IPC分类号: G03F7/004 G03F7/30

    摘要: A positive resist composition, includes: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under an action of an acid; (C) a compound capable of decomposing under an action of an acid to generate an acid; and (D) a compound which itself acts as a base for the acids generated from the component (A) and the component (C) but decomposes upon irradiation with actinic rays or radiation to lose a basicity for the acids generated from the component (A) and the component (C).

    摘要翻译: 正型抗蚀剂组合物包括:(A)在用光化射线或辐射照射时能够产生酸的化合物; (B)在碱性显影剂中的溶解度在酸的作用下增加的树脂; (C)能够在酸的作用下分解以产生酸的化合物; 和(D)本身作为由组分(A)和组分(C)产生的酸的碱的化合物,但是在用光化射线或辐射照射时分解,以失去由组分(A)产生的酸的碱度 )和组分(C)。

    PATTERN FORMING METHOD, AND RESIST COMPOSITION, DEVELOPER AND RINSING SOLUTION USED IN THE PATTERN FORMING METHOD
    7.
    发明申请
    PATTERN FORMING METHOD, AND RESIST COMPOSITION, DEVELOPER AND RINSING SOLUTION USED IN THE PATTERN FORMING METHOD 有权
    图案形成方法和耐蚀组合物,图案形成方法中使用的开发者和研磨溶液

    公开(公告)号:US20100040972A1

    公开(公告)日:2010-02-18

    申请号:US12578520

    申请日:2009-10-13

    IPC分类号: G03F7/20 G03F7/004

    摘要: A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.

    摘要翻译: 一种图案形成方法,包括施加抗蚀剂组合物的步骤,所述抗蚀剂组合物在负光谱显影剂中的溶解度随着光化射线或辐射的照射而降低,并且其含有具有脂环族烃结构和分散性为1.7以下并且能够增加的树脂 通过酸的作用的极性,曝光步骤和使用负色调显影剂的显影步骤; 用于该方法的抗蚀剂组合物; 并且提供了用于该方法的显影剂和冲洗溶液,由此可以形成线边缘粗糙度降低且尺寸均匀性高的图案。

    Positive resist composition and pattern forming method using the same
    8.
    发明申请
    Positive resist composition and pattern forming method using the same 失效
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US20060194148A1

    公开(公告)日:2006-08-31

    申请号:US11356051

    申请日:2006-02-17

    IPC分类号: G03C1/76

    摘要: The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light, source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.

    摘要翻译: 本发明提供了在使用ArF准分子激光作为曝光光源时适当使用的正性抗蚀剂组合物,鉴于抗蚀剂轮廓,灵敏度,分辨率和线边缘粗糙度,并且不发生图案,确保了优异的性能 以及使用该组合物的图案形成方法,其为正型抗蚀剂组合物,其包含(A)在通过光化射线或辐射照射时能够产生酸的化合物,(B)具有脂环族烃结构的树脂, 其在酸的作用下分解以增加在碱中的溶解度,和(C)具有一个或两个选自羟基和羟基的氢原子被取代基的基团的链化合物 链状化合物在常压下为固体的有机基团和使用该组合物的图案形成方法。

    Positive resist composition and pattern forming method using the same
    10.
    发明授权
    Positive resist composition and pattern forming method using the same 失效
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US07338744B2

    公开(公告)日:2008-03-04

    申请号:US11356051

    申请日:2006-02-17

    IPC分类号: G03F7/039

    摘要: The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.

    摘要翻译: 本发明提供了在使用ArF准分子激光作为曝光光源时适当使用的正光刻胶组合物,鉴于抗蚀剂轮廓,灵敏度,分辨率和线边缘粗糙度,确保了优异的性能,并且不发生图案下落 和显影缺陷,以及使用该组合物的图案形成方法,其为正型抗蚀剂组合物,其包含(A)在通过光化射线或辐射照射时能够产生酸的化合物,(B)具有脂环族烃结构的树脂, 在酸的作用下分解以增加在碱中的溶解度,和(C)具有一个或两个选自羟基和羟基的氢原子被取代基的基团的链化合物 有机基团,其中链状化合物在常温常压下为固体,以及使用该组合物的图案形成方法。