摘要:
A pattern forming method, includes: exposing a resist film with actinic rays or radiation a plurality of times; and heating the resist film at a first temperature in at least one interval between the exposures.
摘要:
A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
摘要:
A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
摘要:
A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
摘要:
A positive resist composition, includes: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under an action of an acid; (C) a compound capable of decomposing under an action of an acid to generate an acid; and (D) a compound which itself acts as a base for the acids generated from the component (A) and the component (C) but decomposes upon irradiation with actinic rays or radiation to lose a basicity for the acids generated from the component (A) and the component (C).
摘要:
A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
摘要:
A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
摘要:
The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light, source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.
摘要:
A surface treating agent for resist pattern, characterized by containing not only a chemical species having a functional group capable of chemical adsorption to resist pattern and a polymerizable group but also a solvent.
摘要:
The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.