摘要:
n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).
摘要:
n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).
摘要:
A photovoltaic conversion device (10) includes a semiconductor substrate (1), a passivation film (3), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (5p), and electrodes (7). The passivation film (3) is formed on one of the surfaces of the semiconductor substrate (1). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate (1) (Y-axis direction). The p-type amorphous semiconductor strips (5p) have reduced-thickness regions (51) at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips (5p) (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes (7) are provided on the p-type amorphous semiconductor strips (5p), but not in areas where the reduced-thickness regions (51) have a positive curvature r with respect to the length direction of the reduced-thickness regions (51). Electrodes on the n-type amorphous semiconductor strips have a similar arrangement.
摘要:
The reliability of a super-resolution optical information recording medium whose capacity can be increased is increased. On an optical information recording medium (11) according to the present invention, a content is recorded as a pit group formed such that an average length Tm [nm] of a minimum mark length and a minimum space length becomes shorter than an optical system resolution limit, and reading speed information designating a reading speed in a range from 2×(4.92×Tm/149) [m/s] to less than (10000/60)×2×π×(24/1000) [m/s] is recorded as a reading speed for reproducing the content.
摘要:
The reliability of a super-resolution optical information recording medium whose capacity can be increased is increased. On an optical information recording medium (11) according to the present invention, a content is recorded as a pit group formed such that an average length Tm [nm] of a minimum mark length and a minimum space length becomes shorter than an optical system resolution limit, and reading speed information designating a reading speed in a range from 2×(4.92×Tm/149) [m/s] to less than (10000/60)×2×π×(24/1000) [m/s] is recorded as a reading speed for reproducing the content.
摘要:
An optical recording medium includes: a medium information region on which medium identification information is recorded; a content region on which content information is recorded; and a blank region provided between the medium information region and the content region and in which at least two tracks are provided so as to connect a train of prepits in the medium information region and a train of prepits in the content region. No information is recorded on the blank region. Thus, an optical recording medium is provided in which a region on which medium identification information is recorded and a region on which content information is recorded are different in track pitch and in which a reproduction error hardly occurs when reproduction shifts from the region on which the medium identification information is recorded to the region on which the content information is recorded.
摘要:
A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.
摘要:
In a photovoltaic device (1), first amorphous semiconductor portions (102n) and second amorphous semiconductor portions (102p) are provided alternately on one of faces of a semiconductor substrate (101). Each first amorphous semiconductor portion (102n) has at least one first amorphous semiconductor strip (1020n), and each second amorphous semiconductor portion (102p) has at least one second amorphous semiconductor strip (1020p). A plurality of first electrodes (103n) are provided spaced apart from each other on each first amorphous semiconductor strip (1020n), and a plurality of second electrodes (103p) are provided spaced apart from each other on each second amorphous semiconductor strip (1020p).
摘要:
A super-resolution optical recording medium includes: a medium information region on which medium identification information is recorded; a content region on which content information is recorded; and a blank region provided between the medium information region and the content region and in which at least two tracks are provided so as to connect a train of prepits in the medium information region and a train of prepits in the content region. No information is recorded on the blank region. Thus a super-resolution optical recording medium is provided in which a region on which medium identification information is recorded and a region on which content information is recorded are different in track pitch and in which a reproduction error hardly occurs when reproduction shifts from the region on which the medium identification information is recorded to the region on which the content information is recorded.
摘要:
A super-resolution optical recording medium (10) of the present invention includes: a medium information region (1) on which medium identification information is recorded; a content region (3) on which content information is recorded; and a blank region (2) provided between the medium information region (1) and the content region (3) and in which at least two tracks are provided so as to connect a train of prepits in the medium information region (1) and a train of prepits in the content region (3). No information is recorded on the blank region (2). With this arrangement, the present invention provides a super-resolution optical recording medium in which a region on which medium identification information is recorded and a region on which content information is recorded are different in track pitch and in which a reproduction error hardly occurs when reproduction shifts from the region on which the medium identification information is recorded to the region on which the content information is recorded.