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公开(公告)号:US11107937B2
公开(公告)日:2021-08-31
申请号:US16365144
申请日:2019-03-26
发明人: Teruaki Higo , Takeshi Mori , Makoto Higashikawa
IPC分类号: H01L31/0224 , H01L31/02 , H01L31/0216 , H01L31/0236 , H01L31/0747 , H01L31/20
摘要: The n-type amorphous semiconductor layers 4 are on parts of that one of the faces of the semiconductor substrate 1, there being provided no p-type amorphous semiconductor layers 5 in the parts. The electrodes 6 are disposed on the n-type amorphous semiconductor layers 4. The electrodes 7 are disposed on the p-type amorphous semiconductor layers 5. The p-type amorphous semiconductor layers 5 between those n-type amorphous semiconductor layers 4 which are adjacent along an in-plane direction of the semiconductor substrate 1 include, arranged along a first direction that points from the n-type amorphous semiconductor layers 4 toward the adjacent n-type amorphous semiconductor layers 4: first and second electrode-provided regions where the electrodes 7 are disposed; and a no-electrode-provided region, between the first and second electrode-provided regions, where there are provided no electrodes 7.
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公开(公告)号:US10516066B2
公开(公告)日:2019-12-24
申请号:US16087599
申请日:2017-03-17
发明人: Makoto Higashikawa , Toshihiko Sakai , Kazuya Tsujino , Liumin Zou , Teruaki Higo , Yuta Matsumoto
IPC分类号: H01L31/0216 , H01L31/047 , H01L31/0224 , H01L31/05 , H01L31/02
摘要: A photovoltaic conversion device (10) includes a semiconductor substrate (1), a passivation film (3), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (5p), and electrodes (7). The passivation film (3) is formed on one of the surfaces of the semiconductor substrate (1). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate (1) (Y-axis direction). The p-type amorphous semiconductor strips (5p) have reduced-thickness regions (51) at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips (5p) (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes (7) are provided on the p-type amorphous semiconductor strips (5p), but not in areas where the reduced-thickness regions (51) have a positive curvature r with respect to the length direction of the reduced-thickness regions (51). Electrodes on the n-type amorphous semiconductor strips have a similar arrangement.
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公开(公告)号:US11049981B2
公开(公告)日:2021-06-29
申请号:US16191205
申请日:2018-11-14
发明人: Makoto Higashikawa , Teruaki Higo
IPC分类号: H01L31/02 , H01L31/05 , H01L31/068 , H01L31/0224 , H01L31/0475 , H01L31/0236 , H01L31/0216 , H01L31/0747
摘要: A photovoltaic device (10) includes: a p-type diffusion region (11) and an n-type diffusion region (12) on the backside of a semiconductor substrate (1); electrodes (4, 5); and a wiring board (8). The electrodes (4) are disposed on the p-type diffusion region (11), and the electrodes (5) are disposed on the n-type diffusion region (12). The wiring board (8) includes a wire group (82) connected to the electrodes (4, 6) by conductive adhesion layers (7) and a wire group (83) connected to the electrodes (5) by conductive adhesion layers (7). The photovoltaic device (10) includes at least one of a first structure in which a plurality of electrodes (50) includes at least a pair of adjacent electrodes connected to a single wire and a second structure in which a plurality of electrodes (40) includes at least a pair of adjacent electrodes connected to a single wire.
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公开(公告)号:US11575053B2
公开(公告)日:2023-02-07
申请号:US16610675
申请日:2018-05-10
发明人: Makoto Higashikawa , Yixiao Song
IPC分类号: H01L31/0224 , H01L31/05 , H01L31/0747
摘要: A photovoltaic device including: a first amorphous semiconductor layer (3) and a second amorphous semiconductor layer (4) both on a back face of a semiconductor substrate (1); electrodes (5, 6); and a wiring board (8). The electrodes (5, 6) are disposed on the first amorphous semiconductor layer (3) and the second amorphous semiconductor layer (4) respectively. The wiring board (8) has wires (82) connected to the electrodes (5) by a conductive adhesive layer (7). The wiring board (8) has wires (83) connected to the electrodes (5) by the conductive adhesive layer (7). The electrodes (5) include conductive layers (51, 52). The electrodes (6) include conductive layers (61, 62). The conductive layers (51, 61) are composed primarily of silver. The conductive layers (52, 62) cover the conductive layers (51, 52) respectively. Each conductive layer (52, 62) is composed of a metal more likely to be oxidized than silver.
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公开(公告)号:US11217711B2
公开(公告)日:2022-01-04
申请号:US16626860
申请日:2018-07-09
发明人: Makoto Higashikawa , Yixiao Song
IPC分类号: H01L31/0224 , H01L31/05 , H01L31/068 , H01L31/0747
摘要: A photovoltaic device includes: a p-type diffusion layer (11) and a n-type diffusion layer (12) on a back face of a semiconductor substrate (1); electrodes (4 to 6); and a wiring board (8). The electrodes (4, 6) are disposed on the p-type diffusion layer (11), and the electrodes (5) are disposed on the n-type diffusion layer (12). The wiring board (8) has wires (82) connected to the electrodes (4, 6) by conductive adhesive layers (7) and wires (83) connected to the electrodes (5) by the conductive adhesive layers (7). The electrodes (6) are disposed, on both ends of the n-type diffusion layer (12) with respect to the x-axis direction, between an end region of the n-type diffusion layer (12) and an edge of the semiconductor substrate (1).
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