公开(公告)号：US20120305876A1

公开(公告)日：2012-12-06

申请号：US13331698

申请日：2011-12-20

Applicant: Seung Beom BAEK ,  Young Ho LEE ,  Jin Ku LEE ,  Mi Ri LEE

Inventor： Seung Beom BAEK ,  Young Ho LEE ,  Jin Ku LEE ,  Mi Ri LEE

IPC: H01L45/00 ,  H01L29/872 ,  H01L21/02 ,  H01L29/04

CPC classification number: H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L29/872 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1683

Abstract: A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schottky diode includes a first semiconductor layer, a conductive layer formed on the first semiconductor layer and having a lower work function than the first semiconductor layer, and a second semiconductor layer formed on the to conductive layer.

Abstract translation: 肖特基二极管，包括肖特基二极管的电阻式存储器件及其制造方法。 电阻式存储器件包括一个包括字线，形成在字线上的肖特基二极管和形成在肖特基二极管上的存储层的半导体衬底。 肖特基二极管包括第一半导体层，形成在第一半导体层上并具有比第一半导体层低的功函数的导电层和形成在导电层上的第二半导体层。