公开(公告)号：US12044367B2

公开(公告)日：2024-07-23

申请号：US18223751

申请日：2023-07-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Jun Yong Park

IPC: F21K9/69 ,  F21Y105/16 ,  F21Y115/10 ,  G02B19/00

CPC classification number: F21K9/69 ,  G02B19/0066 ,  F21Y2105/16 ,  F21Y2115/10

Abstract: A light emitting device includes a substrate, a plurality of light emitting diodes, a window, and a reflector. The substrate has a first region and a second region. The plurality of light emitting diodes are disposed on the first region of the substrate. The window has a dome shape and is disposed to cover the first region. The window is configured to control a traveling path of light emitted from the plurality of light emitting diodes. The reflector is configured to support the window and reflect the light emitted from the plurality of light emitting diodes. The reflector has an opening that exposes the plurality of light emitting diodes disposed on the substrate. A distance between two adjacent light emitting diodes of the plurality of light emitting diodes can be 500 micrometers or less.

公开(公告)号：US20230128525A1

公开(公告)日：2023-04-27

申请号：US18069666

申请日：2022-12-21

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Young CHOI ,  Shi Hyun Ahn ,  Ki Yon Park ,  Woong Ki Jeong ,  Kyu Won Han

IPC: C02F1/32

Abstract: A sterilizing device includes a pipe having an inlet and an outlet and allowing fluid to move therethrough and a light source provided on one side of the pipe and providing light to the fluid. At least a portion of the pipe is provided in a spiral shape and the inlet and/or the outlet are arranged in a light emitting region.

公开(公告)号：US20180172506A1

公开(公告)日：2018-06-21

申请号：US15579080

申请日：2016-05-03

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Choong Min Lee ,  Hwa Mok Kim ,  Soo Hyun Lee ,  Gun Woo Han

IPC: G01J1/42 ,  G01J1/44 ,  G01J3/50 ,  G01J1/04 ,  H01L31/0304 ,  H01L31/108 ,  H01L31/02 ,  H01L31/0203 ,  H01L25/04 ,  H01L25/16 ,  H01L23/60

CPC classification number: G01J1/429 ,  G01J1/0407 ,  G01J1/42 ,  G01J1/4228 ,  G01J1/44 ,  G01J3/50 ,  G01J2001/4413 ,  G01R19/165 ,  G01R19/257 ,  G02B6/32 ,  G02B6/42 ,  H01L23/60 ,  H01L25/042 ,  H01L25/167 ,  H01L27/1443 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/024 ,  H01L31/03048 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/1085 ,  Y02E10/544

Abstract: Disclosed are an ultraviolet measuring device, a photodetector, an ultraviolet detector, an ultraviolet index calculation device, and an electronic device or portable terminal including the same. In one aspect, an ultraviolet measuring is provided to comprise: a substrate on which an electrode is formed; a readout integrated circuit (ROTC) unit electrically connected with the electrode; and an aluminum gallium nitride (AlGaN) based UVB sensor electrically connected with the readout integrated circuit unit and formed on an insulating substrate, wherein the read-out integrated circuit converts a photocurrent input from the UV sensor into a digital signal including UV data.

公开(公告)号：US20180122970A1

公开(公告)日：2018-05-03

申请号：US15575752

申请日：2016-05-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Gun Woo Han ,  Choong Min Lee ,  Soo Hyun Lee

IPC: H01L31/0304 ,  H01L31/108 ,  H01L31/18

CPC classification number: H01L31/03044 ,  H01L31/03042 ,  H01L31/03048 ,  H01L31/108 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

Abstract: Disclosed herein is a light detection device. The light detection device includes a base layer, an electrostatic discharge (ESD) prevention layer disposed on the base layer and including an undoped nitride-based semiconductor, a light absorption layer disposed on the ESD prevention layer, a Schottky junction layer disposed on the light absorption layer, and a first electrode and a second electrode electrically connected to the Schottky junction layer and the base layer, respectively, wherein the ESD prevention layer has a lower average n-type dopant concentration than the base layer.

公开(公告)号：US09543476B2

公开(公告)日：2017-01-10

申请号：US14556033

申请日：2014-11-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon Park ,  Jeong Hun Heo ,  Hwa Mok Kim ,  Chang Suk Han ,  Hyo Shik Choi

IPC: H01L33/06 ,  H01L33/32

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers.

Abstract translation: 提供了一种UV发光二极管及其制造方法。 发光二极管包括在n型氮化物基半导体层和p型氮化物基半导体层之间的有源区，其中有源区包括多个含有Al的势垒层，多个阱层含有Al和 交替布置有阻挡层，以及至少一个调理层。 每个调理层位于阱层和与阱层相邻的势垒层之间，并由二元氮化物半导体形成。 调节层的设计可以减少有源区的应力，同时允许均匀地控制阱层和/或阻挡层的组成。

公开(公告)号：US20210199499A1

公开(公告)日：2021-07-01

申请号：US16070511

申请日：2017-01-18

Applicant: SEOUL VIOSYS CO., LTD

Inventor： Ki Yon Park ,  Soo Hyun Lee ,  Choong Min Lee ,  Gun Woo Han

IPC: G01J1/42 ,  G01J1/44 ,  H01L31/103 ,  H01L31/0224

Abstract: An ultraviolet ray detecting device is provided. The ultraviolet ray detecting device comprises: a substrate; a buffer layer disposed on the substrate; a light absorption layer disposed on the buffer layer; a capping layer disposed on the light absorption layer; and a Schottky layer disposed on a partial region of the capping layer, wherein the capping layer has an energy bandgap larger than that of the light absorption layer.

公开(公告)号：US20180175245A1

公开(公告)日：2018-06-21

申请号：US15883774

申请日：2018-01-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon Park ,  Jeong Hun Heo ,  Hwa Mok Kim ,  Gun Woo Han

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/06

Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.

公开(公告)号：US20170033263A1

公开(公告)日：2017-02-02

申请号：US15294563

申请日：2016-10-14

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon Park ,  Jeong Hun Heo ,  Hwa Mok Kim ,  Gun Woo Han

IPC: H01L33/32 ,  H01L33/06 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/06

Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.

Abstract translation: 示例性实施例提供了一种UV发光二极管及其制造方法。 制造UV发光二极管的方法包括生长包括AlGaN的第一n型半导体层，其中第一n型半导体层的生长包括改变生长室内的生长压力并改变n型的流速 掺杂剂源引入生长室。 第一n型半导体层的生长期间的压力变化包括至少一个增压周期和随时间推移的压力降低周期，并且n型掺杂剂源的流量变化包括增加 n型掺杂剂源，其形式为至少一个脉冲。 通过该方法制造的UV发光二极管具有优异的结晶度。

公开(公告)号：US20160027964A1

公开(公告)日：2016-01-28

申请号：US14810464

申请日：2015-07-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon Park ,  Jeong Hun Heo ,  Hwa Mok Kim ,  Gun Woo Han

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/06

Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.

Abstract translation: 示例性实施例提供了一种UV发光二极管及其制造方法。 制造UV发光二极管的方法包括生长包括AlGaN的第一n型半导体层，其中第一n型半导体层的生长包括改变生长室内的生长压力并改变n型的流速 掺杂剂源引入生长室。 第一n型半导体层的生长期间的压力变化包括至少一个增压周期和随时间推移的压力降低周期，并且n型掺杂剂源的流量变化包括增加 n型掺杂剂源，其形式为至少一个脉冲。 通过该方法制造的UV发光二极管具有优异的结晶度。

公开(公告)号：US11761592B2

公开(公告)日：2023-09-19

申请号：US17562433

申请日：2021-12-27

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon Park ,  Jun Yong Park

IPC: F21K9/69 ,  G02B19/00 ,  F21Y105/16 ,  F21Y115/10

CPC classification number: F21K9/69 ,  G02B19/0066 ,  F21Y2105/16 ,  F21Y2115/10

Abstract: A light emitting apparatus includes a substrate, a plurality of light emitting structures, a window, and a reflector. The substrate has a luminous region and a non-luminous region. The plurality of light emitting structures is disposed on the luminous region of the substrate. The window has a dome shape and is disposed to cover the luminous region. The window is configured to control a traveling path of light emitted from the a plurality of light emitting structures. The reflector is configured to support the window and reflect the light emitted from the plurality of light emitting structures. The reflector has an opening that exposes the plurality of light emitting structures mounted on the substrate. A distance between two adjacent light emitting structures of the plurality of light emitting structures is 500 micrometers or less.