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公开(公告)号：US10535691B2
公开(公告)日：2020-01-14
申请号：US15177460
申请日：2016-06-09
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
IPC分类号： H01L27/146 , H04N5/378 , H04N5/374 , H01L29/786 , H01L31/105 , H04N5/361
摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
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公开(公告)号：US11139327B2
公开(公告)日：2021-10-05
申请号：US16591983
申请日：2019-10-03
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
IPC分类号： H01L27/146 , H04N5/374 , H04N5/378 , H01L29/786 , H01L31/105 , H04N5/361
摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
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公开(公告)号：US09846515B2
公开(公告)日：2017-12-19
申请号：US14272735
申请日：2014-05-08
IPC分类号： G06F3/042 , H01L31/0232 , H01L27/144 , H01L27/146
CPC分类号： G06F3/0421 , G06F3/0428 , H01L27/144 , H01L27/14625 , H01L31/0232 , H01L31/02327
摘要： Influence of external light is suppressed. With a photodetector including a photodetector circuit which generates a data signal in accordance with illuminance of incident light and a light unit which overlaps with the photodetector circuit, a first data signal is generated by the photodetector circuit when the light unit is in an ON state, a second data signal is formed by the photodetector circuit when the light unit is in an OFF state, and the first data signal and the second data signal are compared, so that a difference data signal that is data of a difference between the two compared data signals is generated.
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公开(公告)号：US09257567B2
公开(公告)日：2016-02-09
申请号：US14827809
申请日：2015-08-17
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
IPC分类号： H01L29/786 , H01L27/146 , H01L31/105
CPC分类号： H01L27/14616 , H01L27/14603 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L29/7869 , H01L31/1055 , H04N5/361 , H04N5/374 , H04N5/378
摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
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公开(公告)号：US20160118426A1
公开(公告)日：2016-04-28
申请号：US14986119
申请日：2015-12-31
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
IPC分类号： H01L27/146 , H01L31/105 , H01L29/786
CPC分类号： H01L27/14616 , H01L27/14603 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L29/7869 , H01L31/1055 , H04N5/361 , H04N5/374 , H04N5/378
摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
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公开(公告)号：US10534457B2
公开(公告)日：2020-01-14
申请号：US15988562
申请日：2018-05-24
发明人： Daiki Nakamura , Masataka Ikeda
IPC分类号： G06F3/041 , G02F1/1333
摘要： A touch panel capable of performing display and sensing along a curved surface or a touch panel that maintains high detection sensitivity even when it is curved along a curved surface is provided. A flexible display panel is placed along a curved portion included in a surface of a support. A first film layer is attached along a surface of the display panel by a bonding layer. Second to n-th film layers (n is an integer of 2 or more) are sequentially attached along a surface of the first film layer by bonding layers. A flexible touch sensor is attached along a surface of the n-th film layer by a bonding layer.
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公开(公告)号：US09983702B2
公开(公告)日：2018-05-29
申请号：US14553308
申请日：2014-11-25
发明人： Daiki Nakamura , Masataka Ikeda
IPC分类号： G06F3/041 , G02F1/1333
CPC分类号： G06F3/041 , G02F1/13338 , G06F2203/04103 , Y10T29/49002
摘要： A touch panel capable of performing display and sensing along a curved surface or a touch panel that maintains high detection sensitivity even when it is curved along a curved surface is provided. A flexible display panel is placed along a curved portion included in a surface of a support. A first film layer is attached along a surface of the display panel by a bonding layer. Second to n-th film layers (n is an integer of 2 or more) are sequentially attached along a surface of the first film layer by bonding layers. A flexible touch sensor is attached along a surface of the n-th film layer by a bonding layer.
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公开(公告)号：US09515107B2
公开(公告)日：2016-12-06
申请号：US14986119
申请日：2015-12-31
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
IPC分类号： H04N5/355 , H01L27/146 , H01L29/786 , H01L31/105
CPC分类号： H01L27/14616 , H01L27/14603 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L29/7869 , H01L31/1055 , H04N5/361 , H04N5/374 , H04N5/378
摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
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公开(公告)号：US11710751B2
公开(公告)日：2023-07-25
申请号：US17490009
申请日：2021-09-30
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
IPC分类号： H01L27/146 , H01L29/786 , H01L31/105 , H04N25/63 , H04N25/75 , H04N25/76
CPC分类号： H01L27/14616 , H01L27/14603 , H01L27/14636 , H01L27/14643 , H01L29/7869 , H01L31/1055 , H04N25/63 , H04N25/75 , H04N25/76 , H01L27/14632
摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
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公开(公告)号：US09153619B2
公开(公告)日：2015-10-06
申请号：US14600279
申请日：2015-01-20
发明人： Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
IPC分类号： H01L27/146
CPC分类号： H01L27/14616 , H01L27/14603 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L29/7869 , H01L31/1055 , H04N5/361 , H04N5/374 , H04N5/378
摘要： In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
摘要翻译： 在其中多个像素以矩阵形式布置的CMOS图像传感器中，其中沟道形成区域包括氧化物半导体的晶体管被用于处于像素部分的电荷累积控制晶体管和复位晶体管。 在矩阵中排列的所有像素中执行信号电荷累积部分的复位操作之后，在所有像素中执行光电二极管的电荷累积操作，并且每行执行来自像素的信号的读取操作。 因此，可以采取没有失真的图像。
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