公开(公告)号：US20110080642A1

公开(公告)日：2011-04-07

申请号：US12895001

申请日：2010-09-30

申请人： Satoshi WATANABE ,  Takehiro YOSHIDA ,  Toshiro OKAMURA

发明人： Satoshi WATANABE ,  Takehiro YOSHIDA ,  Toshiro OKAMURA

IPC分类号： G02B5/04 ,  G02B5/18

CPC分类号： G02B5/04 ,  G02B5/1895 ,  G02B27/0037

摘要： A dispersion element includes a prism having a first transmission surface and an oppositely disposed second transmission surface, and an optical element having a third transmission surface and an oppositely disposed diffraction optical surface on which a diffraction grating is arranged. The prism and the optical element are integrated into one body by cementing the first transmission surface to the third transmission surface. The third transmission surface and the diffraction optical surface are non-parallel to each other in a plane perpendicular to grooves of the diffraction grating.

摘要翻译： 色散元件包括具有第一透射面和相对设置的第二透射面的棱镜和具有第三透射面和相对设置的衍射光学表面的光学元件，衍射光栅布置在该衍射光学表面上。 棱镜和光学元件通过将第一透射表面固定到第三透射表面而被集成到一体内。 第三透射面和衍射光学面在与衍射光栅的凹槽垂直的平面中彼此不平行。

公开(公告)号：US20110217037A1

公开(公告)日：2011-09-08

申请号：US13040479

申请日：2011-03-04

申请人： Takehiro YOSHIDA ,  Koji MATSUMOTO ,  Satoshi WATANABE ,  Masato NARUSAWA ,  Hirofumi ETO

发明人： Takehiro YOSHIDA ,  Koji MATSUMOTO ,  Satoshi WATANABE ,  Masato NARUSAWA ,  Hirofumi ETO

IPC分类号： H04J14/02

CPC分类号： H04J14/02

摘要： A wavelength selective switch includes a substrate. On the substrate, the wavelength selective switch includes at least one input port, a dispersive element, a light converging element, a light deflecting member, an output port, and a driving mechanism which drives at least one of the dispersive element, the light condenser element, and the light deflecting member, and drive by the driving mechanism is a rotational drive around an axis perpendicular to the substrate, for the dispersive element, and is a translational drive in a direction of dispersion of wavelength with respect to the substrate, for the light condenser element or the light deflecting member.

摘要翻译： 波长选择开关包括基板。 在基板上，波长选择开关包括至少一个输入端口，分散元件，聚光元件，光偏转元件，输出端口和驱动机构，其驱动至少一个色散元件，光聚光器 元件和光偏转构件，并且由驱动机构驱动是围绕垂直于衬底的轴线的旋转驱动用于分散元件，并且是相对于衬底的波长色散方向的平移驱动，用于 光聚光元件或光偏转构件。

公开(公告)号：US20110175200A1

公开(公告)日：2011-07-21

申请号：US12814728

申请日：2010-06-14

申请人： Takehiro YOSHIDA

发明人： Takehiro YOSHIDA

IPC分类号： H01L29/20 ,  C30B23/02 ,  C30B23/04 ,  B26D7/06

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406 ,  Y10T83/0448

摘要： To provide a group III nitride crystal having sufficient conductivity and capable of growing in a short time, for growing the group III nitride crystal on a base substrate by vapor deposition at a growth rate of greater than 450 μm/hour and 2 mm/hour or less, by using a group III halogenated gas and NH3 gas, wherein Ge is doped into the group III nitride crystal by suing GeCl4 as a doping source, so that resistivity of the group III nitride crystal is 1×10−3 Ωcm or more and 1×10−2 Ωcm or less.

摘要翻译： 为了提供具有足够导电性并且能够在短时间内生长的III族氮化物晶体，用于通过以大于450μm/小时和2mm /小时的生长速率的气相沉积在基底基板上生长III族氮化物晶体，或 通过使用III族卤化气体和NH 3气体，其中通过使GeCl 4作为掺杂源将Ge掺杂到III族氮化物晶体中，使得III族氮化物晶体的电阻率为1×10 -3Ω·cm〜 多于1×10-2＆OHgr; cm以下。

公开(公告)号：US20110244761A1

公开(公告)日：2011-10-06

申请号：US12805557

申请日：2010-08-05

申请人： Takehiro YOSHIDA

发明人： Takehiro YOSHIDA

IPC分类号： B24B7/22 ,  H01L21/322

CPC分类号： B24B7/228 ,  B24B7/17

摘要： A method of making a conductive group III nitride single crystal substrate includes feeding to a seed crystal a group III raw material gas, a group V raw material gas, and a doping raw material gas diluted with N2 or Ar to have a predetermined concentration, growing a group III nitride single crystal on the seed crystal at a growth rate of greater than 450 μm/hour and not greater than 2 mm/hour, and doping the group III nitride single crystal with an impurity contained in the doping raw material gas. The doping raw material gas is diluted to be inhibited from reacting with the group V raw material gas so as to allow the group III nitride single crystal to have a specific resistance of not less than 1×10−3 Ωcm and not more than 1×10−2 Ωcm.

摘要翻译： 制造导电III族氮化物单晶衬底的方法包括：向晶种中加入III族原料气体，V族原料气体和用N 2或Ar稀释的掺杂原料气体以具有预定浓度，生长 在晶种上以大于450μm/小时并且不大于2mm /小时的生长速率在晶种上掺杂III族氮化物单晶，并且掺杂掺杂原料气体中含有杂质的III族氮化物单晶。 掺杂原料气体被稀释以被抑制与第V族原料气体反应，以使III族氮化物单晶的电阻率不小于1×10-3＆OHgr·cm且不大于 1×10-2＆OHgr; cm。