公开(公告)号：US08120587B2

公开(公告)日：2012-02-21

申请号：US12289936

申请日：2008-11-07

Applicant: Sangwook Kim ,  Youngsoo Park ,  Changjung Kim

Inventor： Sangwook Kim ,  Youngsoo Park ,  Changjung Kim

IPC: G06F3/041

CPC classification number: G06F3/0414

Abstract: Provided is a touch panel using a zinc oxide (ZnO) nano wire. The touch panel may include a first transparent substrate, a first transparent electrode layer on the first transparent substrate, a light transmissive nano wire layer including a plurality of piezoelectric nano wires that may be arranged on the first transparent electrode layer so as to be perpendicular to the first transparent electrode layer, a second transparent electrode layer on the nano wire layer, and a second transparent substrate on the second transparent electrode layer.

Abstract translation: 提供了使用氧化锌（ZnO）纳米线的触摸面板。 触摸面板可以包括第一透明衬底，第一透明衬底上的第一透明电极层，透光纳米线层，其包括可以布置在第一透明电极层上的多个压电纳米线，以便垂直于 第一透明电极层，纳米线层上的第二透明电极层和第二透明电极层上的第二透明基板。

公开(公告)号：US20090309843A1

公开(公告)日：2009-12-17

申请号：US12289936

申请日：2008-11-07

Applicant: Sangwook Kim ,  Youngsoo Park ,  Changjung Kim

Inventor： Sangwook Kim ,  Youngsoo Park ,  Changjung Kim

IPC: G06F3/041

CPC classification number: G06F3/0414

Abstract: Provided is a touch panel using a zinc oxide (ZnO) nano wire. The touch panel may include a first transparent substrate, a first transparent electrode layer on the first transparent substrate, a light transmissive nano wire layer including a plurality of piezoelectric nano wires that may be arranged on the first transparent electrode layer so as to be perpendicular to the first transparent electrode layer, a second transparent electrode layer on the nano wire layer, and a second transparent substrate on the second transparent electrode layer.

Abstract translation: 提供了使用氧化锌（ZnO）纳米线的触摸面板。 触摸面板可以包括第一透明衬底，第一透明衬底上的第一透明电极层，透光纳米线层，其包括可以布置在第一透明电极层上的多个压电纳米线，以便垂直于 第一透明电极层，纳米线层上的第二透明电极层和第二透明电极层上的第二透明基板。

公开(公告)号：US07940085B2

公开(公告)日：2011-05-10

申请号：US12585557

申请日：2009-09-17

Applicant: Sangwook Kim ,  Ihun Song ,  Changjung Kim ,  Jaechul Park ,  Sunil Kim

Inventor： Sangwook Kim ,  Ihun Song ,  Changjung Kim ,  Jaechul Park ,  Sunil Kim

IPC: H03K19/094

CPC classification number: H01L27/0883 ,  H01L27/1203

Abstract: Provided are an inverter, a method of operating the inverter, and a logic circuit including the inverter. The inverter may include a load transistor and a driving transistor, and at least one of the load transistor and the driving transistor may have a double gate structure. A threshold voltage of the load transistor or the driving transistor may be adjusted by the double gate structure, and accordingly, the inverter may be an enhancement/depletion (E/D) mode inverter.

Abstract translation: 提供了一种逆变器，一种操作该逆变器的方法和一个包括该逆变器的逻辑电路。 逆变器可以包括负载晶体管和驱动晶体管，并且负载晶体管和驱动晶体管中的至少一个可以具有双栅极结构。 可以通过双栅极结构来调节负载晶体管或驱动晶体管的阈值电压，因此，逆变器可以是增强/耗尽（E / D）模式反相器。

公开(公告)号：US20100025674A1

公开(公告)日：2010-02-04

申请号：US12453977

申请日：2009-05-28

Applicant: Changjung Kim ,  Sangwook Kim ,  Sunil Kim

Inventor： Changjung Kim ,  Sangwook Kim ,  Sunil Kim

IPC: H01L29/26 ,  H01L29/786

CPC classification number: H01L29/7869

Abstract: An oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may be obtained by adding hafnium (Hf) to gallium-indium-zinc oxide (GIZO) and may be used as a channel material of the TFT.

Abstract translation: 氧化物半导体和包括该氧化物半导体的薄膜晶体管（TFT）。 氧化物半导体可以通过将镓（Hf）添加到镓 - 铟 - 氧化锌（GIZO）中而获得，并且可以用作TFT的沟道材料。

公开(公告)号：US08217680B2

公开(公告)日：2012-07-10

申请号：US13064492

申请日：2011-03-29

Applicant: Sangwook Kim ,  Ihun Song ,  Changjung Kim ,  Jaechul Park ,  Sunil Kim

Inventor： Sangwook Kim ,  Ihun Song ,  Changjung Kim ,  Jaechul Park ,  Sunil Kim

IPC: H03K19/094

CPC classification number: H01L27/0883 ,  H01L27/1203

Abstract: A method of operating inverter may include providing a load transistor and a driving transistor connected to the load transistor wherein at least one of the load transistor and the driving transistor has a double gate structure, and varying a threshold voltage of the at least one of the load transistor and the driving transistor having the double gate structure. A threshold voltage of the load transistor or the driving transistor may be adjusted by the double gate structure, and accordingly, the inverter may be an enhancement/depletion (E/D) mode inverter.

Abstract translation: 一种操作逆变器的方法可以包括提供负载晶体管和连接到负载晶体管的驱动晶体管，其中负载晶体管和驱动晶体管中的至少一个具有双栅极结构，并且改变至少一个的阈值电压 负载晶体管和具有双栅结构的驱动晶体管。 可以通过双栅极结构来调节负载晶体管或驱动晶体管的阈值电压，因此，逆变器可以是增强/耗尽（E / D）模式反相器。

公开(公告)号：US20100079169A1

公开(公告)日：2010-04-01

申请号：US12585557

申请日：2009-09-17

Applicant: Sangwook Kim ,  Ihun Song ,  Changjung Kim ,  Jaechul Park ,  Sunil Kim

Inventor： Sangwook Kim ,  Ihun Song ,  Changjung Kim ,  Jaechul Park ,  Sunil Kim

IPC: H03K19/094 ,  H03K19/20

CPC classification number: H01L27/0883 ,  H01L27/1203

Abstract: Provided are an inverter, a method of operating the inverter, and a logic circuit including the inverter. The inverter may include a load transistor and a driving transistor, and at least one of the load transistor and the driving transistor may have a double gate structure. A threshold voltage of the load transistor or the driving transistor may be adjusted by the double gate structure, and accordingly, the inverter may be an enhancement/depletion (E/D) mode inverter.

Abstract translation: 提供了一种逆变器，一种操作该逆变器的方法和一个包括该逆变器的逻辑电路。 逆变器可以包括负载晶体管和驱动晶体管，并且负载晶体管和驱动晶体管中的至少一个可以具有双栅极结构。 可以通过双栅极结构来调节负载晶体管或驱动晶体管的阈值电压，因此，逆变器可以是增强/耗尽（E / D）模式反相器。

公开(公告)号：US08242504B2

公开(公告)日：2012-08-14

申请号：US12453977

申请日：2009-05-28

Applicant: Changjung Kim ,  Sangwook Kim ,  Sunil Kim

Inventor： Changjung Kim ,  Sangwook Kim ,  Sunil Kim

IPC: H01L29/26

CPC classification number: H01L29/7869

Abstract: An oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may be obtained by adding hafnium (Hf) to gallium-indium-zinc oxide (GIZO) and may be used as a channel material of the TFT.

Abstract translation: 氧化物半导体和包括该氧化物半导体的薄膜晶体管（TFT）。 氧化物半导体可以通过将镓（Hf）添加到镓 - 铟 - 氧化锌（GIZO）中而获得，并且可以用作TFT的沟道材料。

公开(公告)号：US20110175647A1

公开(公告)日：2011-07-21

申请号：US13064492

申请日：2011-03-29

Applicant: Sangwook Kim ,  Ihun Song ,  Changjung Kim ,  Jaechul Park ,  Sunil Kim

Inventor： Sangwook Kim ,  Ihun Song ,  Changjung Kim ,  Jaechul Park ,  Sunil Kim

IPC: H03K19/094

CPC classification number: H01L27/0883 ,  H01L27/1203

Abstract: A method of operating inverter may include providing a load transistor and a driving transistor connected to the load transistor wherein at least one of the load transistor and the driving transistor has a double gate structure, and varying a threshold voltage of the at least one of the load transistor and the driving transistor having the double gate structure. A threshold voltage of the load transistor or the driving transistor may be adjusted by the double gate structure, and accordingly, the inverter may be an enhancement/depletion (E/D) mode inverter.

Abstract translation: 一种操作逆变器的方法可以包括提供负载晶体管和连接到负载晶体管的驱动晶体管，其中负载晶体管和驱动晶体管中的至少一个具有双栅极结构，并且改变至少一个的阈值电压 负载晶体管和具有双栅结构的驱动晶体管。 可以通过双栅极结构来调节负载晶体管或驱动晶体管的阈值电压，因此，逆变器可以是增强/耗尽（E / D）模式反相器。

公开(公告)号：US08227149B2

公开(公告)日：2012-07-24

申请号：US12656881

申请日：2010-02-18

Applicant: YongJin Chun ,  Soohan Choi ,  Sangwook Kim ,  Seongwoon Choi ,  Sukjoo Lee ,  Sungwoo Lee ,  Youngchang Kim ,  SungSoo Suh ,  Jin-sun Choi

Inventor： YongJin Chun ,  Soohan Choi ,  Sangwook Kim ,  Seongwoon Choi ,  Sukjoo Lee ,  Sungwoo Lee ,  Youngchang Kim ,  SungSoo Suh ,  Jin-sun Choi

IPC: G03F1/70

CPC classification number: G03F1/36

Abstract: Methods of forming masks. According to the methods, a target pattern is set. Generation of a side lobe caused by the target pattern is verified. A preliminary target pattern and a preliminary side lobe pattern are set, in the target pattern and a region where the side lobe is generated, respectively. An interference pattern map using the preliminary target pattern and the preliminary side lobe pattern is created. At least one of regions having a phase identical or opposite to that of a position of the preliminary target pattern in the interference pattern map is set to an interference auxiliary pattern. A mask using the interference auxiliary pattern and the target pattern is formed.

Abstract translation: 形成掩模的方法 根据该方法，设定目标图案。 验证由目标图案引起的旁瓣的产生。 分别在目标图案和产生旁瓣的区域中分别设置初步目标图案和初步旁瓣图案。 创建使用初步目标图案和初步旁瓣图案的干涉图案图。 具有与干涉图案图中的预备目标图案的位置相同或相反的相位的区域中的至少一个被设置为干涉辅助图案。 形成使用干涉辅助图案和目标图案的掩模。

公开(公告)号：US08069048B2

公开(公告)日：2011-11-29

申请号：US11528314

申请日：2006-09-28

Applicant: Dohyung Kim ,  Miyoung Kim ,  Shihwa Lee ,  Sangwook Kim

Inventor： Dohyung Kim ,  Miyoung Kim ,  Shihwa Lee ,  Sangwook Kim

IPC: G10L19/00

CPC classification number: G10L19/24

Abstract: Provided is a scalable encoding method, apparatus, and medium. The method includes: encoding a base layer and encoding a first enhancement layer and a second enhancement layer in a frame having the base layer; and generating an encoded frame by synthesizing the encoded results. Accordingly, only if the loss of the encoding frame is not as great as the encoded first enhancement layer is damaged, a case where speech restoration with respect to partial frequency bands must be given up does not occur. Furthermore, since an encoder divides the second enhancement layer into a plurality of layers in a horizontal or vertical direction, considering a distribution pattern of data belonging to the second enhancement layer and first encodes a layer in which lots of data are distributed among the divided layers, loss of audio information can be minimized even if a portion of the encoded second enhancement layer is damaged.

Abstract translation: 提供了可扩展的编码方法，装置和介质。 该方法包括：在具有基本层的帧中编码基本层并对第一增强层和第二增强层进行编码; 以及通过合成编码结果来生成编码帧。 因此，只有当编码帧的损失不如编码的第一增强层损耗那么大时，不会发生关于部分频带的语音恢复的情况。 此外，由于编码器在水平或垂直方向上将第二增强层划分为多个层，考虑属于第二增强层的数据的分布模式，并且首先编码在划分层之间分布有大量数据的层 即使编码的第二增强层的一部分被损坏，音频信息的丢失也可以被最小化。