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1.发明授权Methods and apparatus for increasing memory density using diode layer sharing 有权使用二极管层共享增加存储密度的方法和装置公开(公告)号：US08633528B2
公开(公告)日：2014-01-21
申请号：US13674513
申请日：2012-11-12
Applicant: SanDisk 3D LLC
Inventor： Huiwen Xu , Er-Xuan Ping , Roy E. Scheuerlein
IPC: H01L29/76
CPC classification number: H01L45/12 , H01L27/10 , H01L27/1021 , H01L27/1052 , H01L27/24 , H01L45/16
Abstract: A memory is described that includes a shared diode layer and a memory element coupled to the diode layer. The memory element has a pie slice-shape, and includes a sidewall having a carbon film thereon. Numerous other aspects are also disclosed.
Abstract translation: 描述了包括共享二极管层和耦合到二极管层的存储元件的存储器。 存储元件具有饼状形状，并且包括其上具有碳膜的侧壁。 还公开了许多其它方面。
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2.发明申请METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAYER SHARING 有权使用二极管共享增加记忆密度的方法和装置公开(公告)号：US20130313503A1
公开(公告)日：2013-11-28
申请号：US13674513
申请日：2012-11-12
Applicant: SanDisk 3D LLC
Inventor： Huiwen Xu , Er-Xuan Ping , Roy E. Scheuerlein
IPC: H01L45/00
CPC classification number: H01L45/12 , H01L27/10 , H01L27/1021 , H01L27/1052 , H01L27/24 , H01L45/16
Abstract: A memory is described that includes a shared diode layer and a memory element coupled to the diode layer. The memory element has a pie slice-shape, and includes a sidewall having a carbon film thereon. Numerous other aspects are also disclosed.
Abstract translation: 描述了包括共享二极管层和耦合到二极管层的存储元件的存储器。 存储元件具有饼状形状，并且包括其上具有碳膜的侧壁。 还公开了许多其它方面。
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