公开(公告)号：US20130175675A1

公开(公告)日：2013-07-11

申请号：US13781983

申请日：2013-03-01

Applicant: SanDisk 3D LLC

Inventor： Kang-Jay Hsia ,  Calvin Li ,  Christopher Petti

IPC: H01L29/66 ,  H01L29/868

CPC classification number: H01L29/6609 ,  H01L21/76802 ,  H01L27/101 ,  H01L27/1021 ,  H01L29/868

Abstract: A method of forming a memory cell is provided. The method includes forming a first pillar-shaped element that includes a first semiconductor material, forming a first opening self-aligned with the first pillar-shaped element, and depositing a second semiconductor material in the first opening to form a second pillar-shaped element above the first pillar-shaped element. Other aspects are also provided.

Abstract translation: 提供一种形成存储单元的方法。 该方法包括：形成包括第一半导体材料的第一柱状元件，形成与第一柱状元件自对准的第一开口，以及在第一开口中沉积第二半导体材料以形成第二柱状元件 在第一个柱状元件之上。 还提供其他方面。

公开(公告)号：US08633105B2

公开(公告)日：2014-01-21

申请号：US13781983

申请日：2013-03-01

Applicant: SanDisk 3D LLC

Inventor： Kang-Jay Hsia ,  Calvin Li ,  Christopher Petti

IPC: H01L21/4763

CPC classification number: H01L29/6609 ,  H01L21/76802 ,  H01L27/101 ,  H01L27/1021 ,  H01L29/868

Abstract: A method of forming a memory cell is provided. The method includes forming a first pillar-shaped element that includes a first semiconductor material, forming a first opening self-aligned with the first pillar-shaped element, and depositing a second semiconductor material in the first opening to form a second pillar-shaped element above the first pillar-shaped element. Other aspects are also provided.

Abstract translation: 提供一种形成存储单元的方法。 该方法包括：形成包括第一半导体材料的第一柱状元件，形成与第一柱状元件自对准的第一开口，以及在第一开口中沉积第二半导体材料以形成第二柱状元件 在第一个柱状元件之上。 还提供其他方面。