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公开(公告)号：US20220267673A1
公开(公告)日：2022-08-25
申请号：US17573734
申请日：2022-01-12
发明人： Min Hyung CHO , Hyo Joong YOON , Min Ju IM , Jung Min OH , Sang Won BAE , Hyo San LEE
IPC分类号： C09K13/00 , H01L21/3213 , H01L21/768
摘要： Etching compositions are provided. The etching compositions can be used for etching cobalt. The etching compositions may include a chelator, water, an oxidizer, and an organic solvent, and the chelator may include an organic acid, an amine compound and/or a polyhydric alcohol. Water may be present in an amount of 1 wt % to 10 wt % based on a total weight of the etching composition.
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公开(公告)号：US20220320317A1
公开(公告)日：2022-10-06
申请号：US17693532
申请日：2022-03-14
发明人： Chang Ju YEOM , Chang Su JEON , Jung Min OH , Sang Won BAE , Jae Sung LEE , Hyo San LEE , Jung Hun LIM
摘要： A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.
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