公开(公告)号：US20220320317A1

公开(公告)日：2022-10-06

申请号：US17693532

申请日：2022-03-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Chang Ju YEOM ,  Chang Su JEON ,  Jung Min OH ,  Sang Won BAE ,  Jae Sung LEE ,  Hyo San LEE ,  Jung Hun LIM

IPC分类号： H01L29/66 ,  H01L21/28 ,  H01L21/02

摘要： A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.