公开(公告)号：US11424202B2

公开(公告)日：2022-08-23

申请号：US16674056

申请日：2019-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bowo Choi ,  Youngtak Kim ,  Sangjine Park ,  Suji Kim ,  Jaeuk Shin ,  Hyunjung Lee ,  Jihun Cheon

IPC: H01L27/108 ,  H01L23/00

Abstract: A semiconductor device includes a landing pad, a first insulating pattern in contact with a lower portion of a side surface of the landing pad, a pad oxide layer having a lateral portion disposed on a portion of an upper surface of the landing pad and a vertical portion in contact with an upper portion of the side surface of the landing pad, a second insulating pattern in contact with an upper surface of the first insulating pattern and covering the first insulating pattern and the pad oxide layer, and a lower electrode that vertically passes through the second insulating pattern and is in contact with a portion of the upper surface and an upper portion of a side surface of the landing pad.

公开(公告)号：US11024659B2

公开(公告)日：2021-06-01

申请号：US16555151

申请日：2019-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesung Hur ,  Youngtak Kim ,  Hajin Lim

IPC: H01L27/146

Abstract: An image sensor and a method of fabricating an image sensor are provided, the image sensor including a plurality of color filters spaced apart from each other on a semiconductor substrate; a protective layer covering sidewalls of the color filters and top surfaces of the color filters; and a low-refractive pattern filling a space between the color filters.

公开(公告)号：US11437246B2

公开(公告)日：2022-09-06

申请号：US17008736

申请日：2020-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchan Kim ,  Youngtak Kim ,  Jungah Kim ,  Hoon Han ,  Geunjoo Baek ,  Chisung Ihn ,  Sangmoon Yun

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/311

Abstract: Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.

公开(公告)号：US11302526B2

公开(公告)日：2022-04-12

申请号：US16561078

申请日：2019-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Byung-Kwon Cho ,  Jihoon Jeong ,  Youngtak Kim ,  Yongsun Ko ,  Seulgee Jeon

IPC: H01L21/02 ,  H01L21/67

Abstract: A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.

公开(公告)号：US11217748B2

公开(公告)日：2022-01-04

申请号：US16807245

申请日：2020-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtak Kim ,  Sangjine Park ,  Wonjun Lee ,  Hyeyeong Seo ,  Jaeuk Shin

IPC: H01L45/00

Abstract: A semiconductor device, includes: a first conductive structure on a substrate; a second conductive structure on the first conductive structure; and a first memory cell structure between the first conductive structure and the second conductive structure, wherein the first memory cell structure includes: a switching material pattern on the first conductive structure; a data storage material pattern on the switching material pattern; and an upper conductive pattern on the data storage material pattern, wherein a first width of a lower region of the data storage material pattern is less than a first width of the switching material pattern, and wherein a first width of the upper conductive pattern is less than a width of an upper region of the data storage material pattern.