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公开(公告)号:US20250140509A1
公开(公告)日:2025-05-01
申请号:US18631735
申请日:2024-04-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dongwan KIM , Minsung KIM , Youngseok SONG , Jisoo IM , Kanghee KIM , Younseon WANG , Junho IM
IPC: H01J37/02 , H01J37/305
Abstract: An ion neutralization module comprising a reflector configured to neutralize an ion, a frame configured to support the reflector, and a conductive adhesive between the reflector and the frame to attach the reflector to the frame.
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公开(公告)号:US20240113182A1
公开(公告)日:2024-04-04
申请号:US18538575
申请日:2023-12-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yonghee PARK , Myunggil KANG , Uihui KWON , Seungkyu KIM , Ahyoung KIM , Ahyoung KIM , Youngseok SONG
IPC: H01L29/417 , H01L27/088 , H01L29/06 , H01L29/423 , H01L29/786
CPC classification number: H01L29/41775 , H01L27/088 , H01L29/0665 , H01L29/42392 , H01L29/78696
Abstract: An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.
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公开(公告)号:US20220165857A1
公开(公告)日:2022-05-26
申请号:US17352973
申请日:2021-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yonghee PARK , Myunggil KANG , Uihui KWON , Seungkyu KIM , Ahyoung KIM , Youngseok SONG
IPC: H01L29/417 , H01L29/06 , H01L29/423 , H01L29/786 , H01L27/088
Abstract: An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.
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