公开(公告)号：US09960201B2

公开(公告)日：2018-05-01

申请号：US14830926

申请日：2015-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Ho Lee ,  Seung Joo Nah ,  Young Sun Oh ,  Dong Young Jang

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14689

Abstract: A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration.

公开(公告)号：US10128288B2

公开(公告)日：2018-11-13

申请号：US15229549

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Sun Oh ,  Jung Chak Ahn ,  Young Woo Jung

IPC: H01L27/146

Abstract: Image sensors and image processing devices including the image sensors are provided. The image sensors may include a semiconductor substrate including a plurality of pixel areas, a photodiode provided in the semiconductor substrate in one of the plurality of pixel areas and a transfer transistor having a transfer gate electrode. A portion of the transfer gate electrode may be in the semiconductor substrate and may extend toward the photodiode. The image sensors may also include a floating diffusion configured to accumulate charges transferred from the photodiode by the transfer transistor, and the floating diffusion may include a first area and a second area disposed on different sides of the transfer gate electrode.

公开(公告)号：US10096632B2

公开(公告)日：2018-10-09

申请号：US15425570

申请日：2017-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Sun Oh ,  Yi Tae Kim ,  Jung Chak Ahn

IPC: H01L27/14 ,  H01L27/146

Abstract: An image sensor includes a substrate having a first pixel region and a second pixel region adjacent to the first pixel region, a device isolation layer between the first pixel region and the second pixel region and isolating the first pixel region and the second pixel region from each other, a first transistor disposed in the first pixel region, a second transistor disposed in the second pixel region, and a wiring structure electrically connecting the first transistor and the second transistor. The device isolation layer has a deep trench isolation (DTI) structure which extends from a top surface toward a bottom surface of the substrate.