公开(公告)号：US20230084804A1

公开(公告)日：2023-03-16

申请号：US17833058

申请日：2022-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Moon CHOI ,  Sung Il PARK ,  Dae Won HA

IPC: H01L29/417 ,  H01L29/78

Abstract: A semiconductor device is provided. The semiconductor device includes: a first active pattern extending in a first direction; a second active pattern spaced apart extending in the first direction, the first active pattern being provided between the second active pattern and a substrate; a gate structure extending in a second direction, the first active pattern and the second active pattern passing through the gate structure, and the second direction crossing the first direction; a first source/drain area connected with the first active pattern and provided on a side of the gate structure; a second source/drain area connected with the second active pattern and provided on the first source/drain area; a first insulating structure provided between the substrate and the first source/drain area, the first insulating structure not being provided between the substrate and the gate structure; and a second insulating structure provided between the first source/drain area and the second source/drain area.

公开(公告)号：US20140174516A1

公开(公告)日：2014-06-26

申请号：US13921546

申请日：2013-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Moon CHOI ,  Dong Kyun KIM ,  Yun Gi KIM ,  Eun Cheol DO ,  Yeon Il LEE

IPC: H01L31/0687 ,  H01L31/18

CPC classification number: H01L31/03529 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a crystalline photovoltaic layer, a first impurity region having a first conductivity type and a second impurity region having a second conductivity type in the photovoltaic layer, a third impurity region having the first conductivity type in the first impurity region, a fourth impurity region having the second conductivity type in the second impurity region, a first barrier layer and a second barrier layer contacting the third impurity region and the fourth impurity region, respectively, and a first electrode and a second electrode contacting the first barrier layer and the second barrier layer, respectively. The first impurity region and the second impurity region are spaced apart from each other. The third impurity region and the fourth impurity region have an impurity concentration higher than the first impurity region the second impurity region, respectively.

Abstract translation: 太阳能电池包括结晶光伏层，具有第一导电类型的第一杂质区和在光伏层中具有第二导电类型的第二杂质区，在第一杂质区中具有第一导电类型的第三杂质区，第四杂质区 在第二杂质区域具有第二导电类型的杂质区域，分别与第三杂质区域和第四杂质区域接触的第一势垒层和第二阻挡层，以及与第一阻挡层和第二杂质区域接触的第一电极和第二电极 第二阻挡层。 第一杂质区和第二杂质区互相间隔开。 第三杂质区域和第四杂质区域的杂质浓度分别高于第二杂质区域的第一杂质区域。

公开(公告)号：US20130247975A1

公开(公告)日：2013-09-26

申请号：US13848874

申请日：2013-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Cheol DO ,  Dong Kyun KIM ,  Yun Gi KIM ,  Chul Ki KIM ,  Yeon Il LEE ,  Young Moon CHOI

IPC: H01L31/0216

CPC classification number: H01L31/02167 ,  H01L31/02168 ,  H01L31/028 ,  H01L31/068 ,  Y02E10/547

Abstract: A solar cell includes a semiconductor layer including a charge carrier produced therein upon exposure to light, and a passivation layer on a side of the semiconductor layer, the passivation layer configured to apply a stress to the semiconductor layer and change a mobility of the charge carrier into a direction in the semiconductor layer.

Abstract translation: 一种太阳能电池包括一个半导体层，该半导体层包括在曝光时在其中产生的电荷载体，以及在该半导体层一侧的钝化层，钝化层被配置为向半导体层施加应力并改变载流子的迁移率 进入半导体层的方向。