公开(公告)号：US20200312727A1

公开(公告)日：2020-10-01

申请号：US16709125

申请日：2019-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min KANG ,  Kyung Min KIM ,  Young Mok KIM ,  Min Hee UH

IPC: H01L21/8238 ,  H01L27/12 ,  H01L27/092 ,  H01L21/84

Abstract: A method of manufacturing a semiconductor device includes providing a substrate including a first region and a second region, forming a first channel layer in the first region of the substrate, forming an isolation region in the substrate to electrically isolate a portion of the first region from a portion of the second region, etching an upper surface of the second region of the substrate, forming a protection layer covering the first channel layer in the first region of the substrate and the second region of the substrate, removing the protection layer on the second region of the substrate, forming a gate insulation material layer on the protection layer and on the second region of the substrate, and removing the gate insulation material layer and the protection layer on the first region of the substrate.

公开(公告)号：US20230077888A1

公开(公告)日：2023-03-16

申请号：US17745423

申请日：2022-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Mok KIM ,  Kyung Lyong KANG ,  Jun Gu KANG ,  Yong Sang JEONG

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device includes: a substrate including first and second regions thereon; a first active region in the first region; an active pattern protruding from the first active region; a second active region in the second region; a first gate electrode on the active pattern; a second gate electrode on the second active region; a first gate insulating layer, including a first-first insulating layer, between the active pattern and the first gate electrode; and a second gate insulating layer, including a second-first insulating layer and a second-second insulating layer below the second-first insulating layer, between the second active region and the second gate electrode, wherein a thickness in a vertical direction of the first gate electrode that overlaps the active pattern in the vertical direction is equal to a thickness in the vertical direction of the second gate electrode that overlaps the second active region in the vertical direction, and an upper surface of the first gate electrode is formed at a same level as an upper surface of the second gate electrode.

公开(公告)号：US20170131832A1

公开(公告)日：2017-05-11

申请号：US15343897

申请日：2016-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Jun LEE ,  Jae Min LEE ,  Seung Jin KIM ,  Jun Ik LEE ,  Ki Won KIM ,  Young Mok KIM

IPC: G06F3/041 ,  G06F3/044

CPC classification number: G06F3/0416 ,  G06F3/0412 ,  G06F3/0418 ,  G06F3/044 ,  G06F3/0488

Abstract: An electronic device is provided. The electronic device includes an input panel configured to periodically sense touch coordinates corresponding to a touch manipulation of a user; and a processor configured to periodically receive the touch coordinates from the input panel, calculate a variation of the touch coordinates based on the touch coordinates, change a reference value for determining movement of the touch manipulation based on the variation of the touch coordinates, and determine whether the touch manipulation moves, based on the reference value.