公开(公告)号：US20250022764A1

公开(公告)日：2025-01-16

申请号：US18412770

申请日：2024-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjung KIM ,  Solji SONG ,  Jiseok YEO ,  Hyojun YOON ,  Dongjin LEE ,  Yoonseok CHOI

IPC: H01L23/31 ,  H01L23/00 ,  H01L25/065

Abstract: A semiconductor package is provided. The semiconductor package includes a package substrate including bonding pads on a upper surface thereof and external connectors on a lower surface thereof, a first chip structure connected to the package substrate with a bonding wire and disposed on the package substrate, a second chip structure disposed on the package substrate and disposed next to the first chip structure, and a mold layer covering the package substrate, the first chip structure, and the second chip structure, wherein the first chip structure includes a plurality of semiconductor dies that are sequentially stacked, the second chip structure includes a second semiconductor substrate, an oxide layer on the second semiconductor substrate, and an adhesion enhancer layer disposed on the oxide layer and in contact with the mold layer, heights of the first chip structure and the second chip structure are the same.

公开(公告)号：US20170243763A1

公开(公告)日：2017-08-24

申请号：US15345534

申请日：2016-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonseok CHOI ,  Ilho KIM ,  Changho KIM

IPC: H01L21/56 ,  H01L23/00 ,  H01L21/683

CPC classification number: H01L21/568 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/373 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68318 ,  H01L2221/68386 ,  H01L2224/02331 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2924/3511

Abstract: A support substrate, a method of manufacturing a semiconductor package, and a semiconductor package, the support substrate including a first plate; a second plate on the first plate; and an adhesive layer between the first plate and the second plate, wherein a coefficient of thermal expansion (CTE) of the adhesive layer is higher than a CTE of the first plate and higher than a CTE of the second plate.