公开(公告)号：US20250167113A1

公开(公告)日：2025-05-22

申请号：US18754295

申请日：2024-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeewoong KIM ,  Jinkyu KIM ,  Yunsuk NAM ,  Yoonbeom PARK ,  Keunhwi CHO

IPC: H01L23/528 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is an integrated circuit device including first and second power lines each overlapping a first cell region, an inter-cell separation region, and a second cell region on a substrate in a vertical direction to the substrate, a first power tap cell penetrating through the substrate and receiving a first voltage from the first power line, a second power tap cell penetrating through the substrate and receiving, from the second power line, a second voltage different from the first voltage, and a dummy gate insulating bridge including first and second dummy gate insulating lines, which are apart from each other with the first and second power tap cells therebetween, and defining a vacuum space, and connected to the first and second dummy gate insulating lines.