公开(公告)号：US12052856B2

公开(公告)日：2024-07-30

申请号：US17657202

申请日：2022-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In Kang ,  Jun Young Choi ,  Yoon Gi Hong ,  Tae Hoon Kim ,  Sung-Jin Yeo ,  Sang Yeon Han

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L25/065 ,  H10B12/00

CPC classification number: H10B12/315 ,  H10B12/34

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.

公开(公告)号：US20240292602A1

公开(公告)日：2024-08-29

申请号：US18462614

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ho Lee ,  Moon Young Jeong ,  Dong Soo Woo ,  Yoon Gi Hong

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/315 ,  H10B12/488

Abstract: A semiconductor memory device includes a bit line extended in a first direction on a substrate, a first word line extended in a second direction on the bit line, a second word line extended in the second direction on the bit line and spaced apart from the first word line in the first direction, a back gate electrode between the first word line and the second word line and extended in the second direction, a first active pattern between the first word line and the back gate electrode on the bit line, and a second active pattern between the first word line and the back gate electrode on the bit.