公开(公告)号：US11469306B2

公开(公告)日：2022-10-11

申请号：US16995044

申请日：2020-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jee-Sun Lee ,  Dong Soo Woo ,  Nam Ho Jeon

IPC: H01L29/423 ,  H01L27/108

Abstract: A semiconductor device including a substrate having isolation films and active regions that are defined by the isolation films. The active regions extend in a first direction. A first trench is disposed on the substrate. Second trenches are disposed in the active regions. A filling film is disposed in the first trench. First gate patterns are disposed on the filling film in the first trench. Second gate patterns are disposed in the second trenches. The second gate patterns extend in a second direction that is different from the first direction. The filling film includes at least one material selected from a semiconductor material film and a metal.

公开(公告)号：US20240292602A1

公开(公告)日：2024-08-29

申请号：US18462614

申请日：2023-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ho Lee ,  Moon Young Jeong ,  Dong Soo Woo ,  Yoon Gi Hong

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/315 ,  H10B12/488

Abstract: A semiconductor memory device includes a bit line extended in a first direction on a substrate, a first word line extended in a second direction on the bit line, a second word line extended in the second direction on the bit line and spaced apart from the first word line in the first direction, a back gate electrode between the first word line and the second word line and extended in the second direction, a first active pattern between the first word line and the back gate electrode on the bit line, and a second active pattern between the first word line and the back gate electrode on the bit.