公开(公告)号：US11901187B2

公开(公告)日：2024-02-13

申请号：US17522193

申请日：2021-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanyeol Park ,  Jongyoung Park ,  Yongdeok Lee ,  Sejin Kyung ,  Daewee Kong ,  Ilwoo Kim ,  Songyi Baek ,  Philippe Coche

IPC: H01L21/308 ,  H01L21/768 ,  H01L21/02 ,  H01L29/06 ,  H01L49/02

CPC classification number: H01L21/3086 ,  H01L21/02129 ,  H01L21/76829 ,  H01L28/40 ,  H01L28/60 ,  H01L29/06

Abstract: Provided is a semiconductor device. The semiconductor device includes a wafer; an etch stop layer on the wafer; a lower mold layer on the etch stop layer; an intermediate supporter layer on the lower mold layer; an upper mold layer on the intermediate supporter layer; an upper supporter layer on the upper mold layer; and a hard mask structure on the upper supporter layer, wherein the hard mask structure includes a first hard mask layer on the upper supporter layer and a second hard mask layer on the first hard mask layer, one of the first hard mask layer and the second hard mask layer includes a first organic layer including a SOH containing C, H, O, and N, and the other one of the first hard mask layer and the second hard mask layer includes a second organic layer including an SOH containing C, H, and O.