公开(公告)号：US20170309701A1

公开(公告)日：2017-10-26

申请号：US15424951

申请日：2017-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWAN CHANG ,  YOUNSOO KIM ,  SUNMIN MOON ,  JAEHYOUNG CHOI

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L28/60 ,  H01L28/90

Abstract: A semiconductor device comprises a capacitor that includes a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer comprises a first high-k dielectric layer between the first electrode and the second electrode, a first silicon oxide layer between the first high-k dielectric layer and the second electrode, and a first aluminum oxide layer between the first high-k dielectric layer and the second electrode.

公开(公告)号：US20210407795A1

公开(公告)日：2021-12-30

申请号：US17358089

申请日：2021-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNSOO KIM ,  Jaewoon Kim ,  Haeryong Kim ,  Jinho Lee ,  Tsubasa Shiratori

IPC: H01L21/02 ,  H01L49/02

Abstract: Methods of forming a material layer according to some embodiments of the inventive concept may include a deposition cycle including providing an adsorption inhibitor on a substrate, purging an excess amount of the adsorption inhibitor, providing a metal precursor on the substrate, purging an excess amount of the metal precursor, and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a group 15 element or a group 16 element.

公开(公告)号：US20240373620A1

公开(公告)日：2024-11-07

申请号：US18773826

申请日：2024-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： KYOOHO JUNG ,  JEONG-GYU SONG ,  YOUNSOO KIM ,  JOOHO LEE

IPC: H10B12/00 ,  H01L21/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.