公开(公告)号：US20170309701A1

公开(公告)日：2017-10-26

申请号：US15424951

申请日：2017-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWAN CHANG ,  YOUNSOO KIM ,  SUNMIN MOON ,  JAEHYOUNG CHOI

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L28/60 ,  H01L28/90

Abstract: A semiconductor device comprises a capacitor that includes a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode. The dielectric layer comprises a first high-k dielectric layer between the first electrode and the second electrode, a first silicon oxide layer between the first high-k dielectric layer and the second electrode, and a first aluminum oxide layer between the first high-k dielectric layer and the second electrode.