公开(公告)号：US20230284450A1

公开(公告)日：2023-09-07

申请号：US18097332

申请日：2023-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngsik LEE ,  HYUK KIM ,  YEONGEUN YOOK

IPC: H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H01L23/528 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40

CPC classification number: H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H01L23/5283 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40

Abstract: A semiconductor device and an electronic system including the same are provided. The semiconductor device may include a stacked structure including electrodes stacked on a substrate, interlayer insulating layers interposed between the electrodes, and an upper insulating layer covering the uppermost electrode among the electrodes, and a vertical structure passing through the stacked structure in a vertical direction, and each of the interlayer insulating layers may have a first thickness, and the upper insulating layer may have a second thickness greater than the first thickness, and the upper insulating layer may include an insulating material different from an insulating material of each of the interlayer insulating layers.