公开(公告)号：US20170040254A1

公开(公告)日：2017-02-09

申请号：US15331224

申请日：2016-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min HWANG ,  Young-Ho LEE ,  Seong-Soon CHO ,  Woon-Kyung LEE

IPC: H01L23/528 ,  H01L27/115

Abstract: Step shape pad structure and wiring structure in vertical type semiconductor device are include a first conductive line having a first line shape and including first pad regions at an upper surface of an edge portion, and a second conductive line having s second line shape and being spaced apart from the first conductive line and provided on the first conductive line. An end portion of the first conductive line is extended to a first position. Second pad regions are included on an upper surface of an edge portion of the second conductive line. An end portion of the second conductive line is extended to the first position. The second conductive line includes a dent portion at a facing portion to the first pad regions in a vertical direction to expose the first pad regions. The pad structure may be used in a vertical type nonvolatile memory device.

Abstract translation: 垂直型半导体器件中的阶形形状焊盘结构和布线结构包括具有第一线形状并且在边缘部分的上表面处包括第一焊盘区域的第一导电线和具有第二线形并且间隔开的第二导线 并且设置在第一导线上。 第一导线的端部延伸到第一位置。 第二焊盘区域包括在第二导线的边缘部分的上表面上。 第二导线的端部延伸到第一位置。 第二导线包括在垂直方向上与第一焊盘区域相对的部分处的凹部，以露出第一焊盘区域。 衬垫结构可以用在垂直型非易失性存储器件中。

公开(公告)号：US20150311213A1

公开(公告)日：2015-10-29

申请号：US14790724

申请日：2015-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min HWANG ,  Han-Soo KIM ,  Woon-Kyung LEE ,  Won-Seok CHO

IPC: H01L27/115

CPC classification number: H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

Abstract: A method of manufacturing a vertical type memory device includes stacking a first lower insulating layer, one layer of a lower sacrificial layer and a second lower insulating layer on a substrate, forming a stacking structure by stacking sacrificial layers and insulating layers, and etching an edge portion of the stacking structure to form a preliminary stepped shape pattern structure. The preliminary stepped shape pattern structure has a stepped shape edge portion. A pillar structure making contact with a surface of the substrate is formed. The preliminary stepped shape pattern structure, the lower sacrificial layer, and the first and second lower insulating layers are partially etched to form a first opening portion and a second opening portion to form a stepped shape pattern structure. The second opening portion cuts at least an edge portion of the lower sacrificial layer.

Abstract translation: 制造垂直型存储装置的方法包括在基板上堆叠第一下绝缘层，一层下牺牲层和第二下绝缘层，通过堆叠牺牲层和绝缘层形成堆叠结构，并蚀刻边缘 部分堆叠结构以形成初步的阶梯状图案结构。 初步阶形形状图案结构具有阶梯形边缘部分。 形成与基板表面接触的柱结构。 部分地蚀刻初步阶形状图案结构，下牺牲层和第一下绝缘层和第二下绝缘层，以形成第一开口部分和第二开口部分，以形成台阶状图形结构。 第二开口部分切割下牺牲层的至少边缘部分。