公开(公告)号：US10199263B2

公开(公告)日：2019-02-05

申请号：US15616334

申请日：2017-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Shin Jang ,  Woo-Kyung You ,  Kyu-Hee Han ,  Jong-Min Baek ,  Viet Ha Nguyen ,  Byung-Hee Kim

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.

公开(公告)号：US10128148B2

公开(公告)日：2018-11-13

申请号：US15636889

申请日：2017-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Viet Ha Nguyen ,  Nae In Lee ,  Thomas Oszinda ,  Byung Hee Kim ,  Jong Min Baek ,  Tae Jin Yim

IPC: H01L21/768

Abstract: Methods for fabricating semiconductor devices may provide enhanced performance and reliability by recovering quality of a low-k insulating film damaged by a plasma process. A method may include forming a first interlayer insulating film having a trench therein on a substrate, filling at least a portion of the trench with a metal wiring region, exposing a surface of the metal wiring region and a surface of the first interlayer insulating film to a plasma in a first surface treatment process, then exposing the surface of the first interlayer insulating film to a recovery gas containing a methyl group (—CH3) in a second surface treatment process, and then forming an etch stop layer on the metal wiring region and the first interlayer insulating film.

公开(公告)号：US10832948B2

公开(公告)日：2020-11-10

申请号：US16854979

申请日：2020-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Hee Han ,  Jong Min Baek ,  Viet Ha Nguyen ,  Woo Kyung You ,  Sang Shin Jang ,  Byung Hee Kim

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/311 ,  H01L23/528

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

公开(公告)号：US10777449B2

公开(公告)日：2020-09-15

申请号：US16242483

申请日：2019-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Shin Jang ,  Woo-Kyung You ,  Kyu-Hee Han ,  Jong-Min Baek ,  Viet Ha Nguyen ,  Byung-Hee Kim

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.

公开(公告)号：US10658231B2

公开(公告)日：2020-05-19

申请号：US15612102

申请日：2017-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Hee Han ,  Jong Min Baek ,  Viet Ha Nguyen ,  Woo Kyung You ,  Sang Shin Jang ,  Byung Hee Kim

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L21/311 ,  H01L23/528

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.