公开(公告)号：US20230035916A1

公开(公告)日：2023-02-02

申请号：US17653390

申请日：2022-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tea Won Kim ,  Hyung Joon Kim ,  Yong-Suk Tak ,  Yu Rim Kim ,  Kong Soo Lee

IPC: H01L29/786

Abstract: A semiconductor device includes a conductive line that extends in a first direction on a substrate, a first oxide semiconductor layer, including a first crystalline oxide semiconductor material containing a first metal element, on the conductive line, a second oxide semiconductor layer, which is in physical contact with the first oxide semiconductor layer and is connected to the conductive line, on the conductive line, a gate electrode that extends in a second direction, which crosses the first direction, on a side of the second oxide semiconductor layer, and a capacitor structure connected to the second oxide semiconductor layer on the second oxide semiconductor layer and the gate electrode, wherein the second oxide semiconductor layer includes a second crystalline oxide semiconductor material containing the first metal element and second and third metal elements, which are different from the first metal element.

公开(公告)号：US10403739B2

公开(公告)日：2019-09-03

申请号：US15865531

申请日：2018-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tea Won Kim ,  Yong Suk Tak ,  Ki Yeon Park

IPC: H01L29/66 ,  H01L29/06

Abstract: A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor layer alternately stacked on a substrate, forming a dummy gate structure on the stacked structure, etching a recess in the stacked structure using the dummy gate structure as a mask, etching portions of the sacrificial layer exposed by the recess to form an etched sacrificial layer, forming a first spacer film on the etched sacrificial layer, forming a second spacer film on the first spacer film, the second spacer film including a material different from a material of the first spacer film, removing a first portion of the second spacer film, such that a second portion of the second spacer film remains, and forming a third spacer film on the second portion of the second spacer film.