公开(公告)号：US20240162225A1

公开(公告)日：2024-05-16

申请号：US18318854

申请日：2023-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juseong MIN ,  Jae-Bok Baek ,  Taekkyu Yoon ,  Seungwook Choi ,  Jeehoon Han ,  Taeyoon Hong

IPC: H01L27/08 ,  H01L21/306 ,  H01L21/308

CPC classification number: H01L27/0802 ,  H01L21/30604 ,  H01L21/308 ,  H01L28/20

Abstract: A semiconductor device includes an active pattern having sharp corners. The semiconductor device includes a peripheral circuit including a substrate, a resistor device in the substrate, and an active pattern on the substrate. When viewed in a plan view, the active pattern includes corners in a serpentine shape, and first and second shapes of the corners are different from each other.

公开(公告)号：US20250071994A1

公开(公告)日：2025-02-27

申请号：US18767830

申请日：2024-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kohji Kanamori ,  Seogoo Kang ,  Kyungdong Kim ,  Seunghyun Lee ,  Junghoon Jun ,  Jeehoon Han ,  Taeyoon Hong

IPC: H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40

Abstract: A semiconductor device includes a gate electrode structure, a memory channel structure, and a first contact plug. The gate electrode structure is disposed on a substrate, and includes gate electrodes spaced apart from each other in a first direction substantially perpendicular to an upper surface of the substrate. Each of the gate electrode extends in a second direction substantially parallel to the upper surface of the substrate. The memory channel structure extends through the gate electrode structure on the substrate. The first contact plug extends in the first direction on the substrate through and contacting a corresponding one of the gate electrodes, and a portion of a sidewall of the first contact plug at substantially the same level as the corresponding one of the gate electrodes is not surrounded by the corresponding one of the gate electrodes.